Graphene-induced positive shift of the flat band voltage in recessed gate AlGaN/GaN structures

2021 ◽  
Vol 118 (17) ◽  
pp. 173504
Author(s):  
Xiaobo Liu ◽  
Li Zheng ◽  
Xinhong Cheng ◽  
Lingyan Shen ◽  
Shaoyu Liu ◽  
...  
Keyword(s):  
Flat Band ◽  
Flat Band Voltage ◽  
Positive Shift ◽  
Recessed Gate

Investigation of flat band voltage shift in recessed-gate GaN MOSHFETs with post-metallization-annealing in oxygen atmosphere

2015 ◽  
Vol 30 (11) ◽  
pp. 115008 ◽  
Author(s):  
Jae-Gil Lee ◽  
Hyun-Seop Kim ◽  
Jung-Yeon Lee ◽  
Kwang-Seok Seo ◽  
Ho-Young Cha
Keyword(s):  
Oxygen Atmosphere ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Voltage Shift ◽  
Recessed Gate

Analyzing the interface trap density in SiGe capacitors using an abnormal flat band voltage shift at low temperature

2020 ◽  
Vol 13 (11) ◽  
pp. 111006
Author(s):  
Li-Chuan Sun ◽  
Chih-Yang Lin ◽  
Po-Hsun Chen ◽  
Tsung-Ming Tsai ◽  
Kuan-Ju Zhou ◽  
...  
Keyword(s):  
Low Temperature ◽  
Trap Density ◽  
Flat Band ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Flat Band Voltage ◽  
Voltage Shift

scholarly journals Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO2 stack structure via work function depth profiling

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Sung Heo ◽  
Hyoungsun Park ◽  
Dong-Su Ko ◽  
Yong Su Kim ◽  
Yong Koo Kyoung ◽  
...  
Keyword(s):  
Work Function ◽  
Direct Evidence ◽  
Depth Profiling ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Voltage Shift
Sign in / Sign up

Export Citation Format

Share Document