scholarly journals Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO2 stack structure via work function depth profiling

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Sung Heo ◽  
Hyoungsun Park ◽  
Dong-Su Ko ◽  
Yong Su Kim ◽  
Yong Koo Kyoung ◽  
...  
Keyword(s):  
Work Function ◽  
Direct Evidence ◽  
Depth Profiling ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Voltage Shift

Analyzing the interface trap density in SiGe capacitors using an abnormal flat band voltage shift at low temperature

2020 ◽  
Vol 13 (11) ◽  
pp. 111006
Author(s):  
Li-Chuan Sun ◽  
Chih-Yang Lin ◽  
Po-Hsun Chen ◽  
Tsung-Ming Tsai ◽  
Kuan-Ju Zhou ◽  
...  
Keyword(s):  
Low Temperature ◽  
Trap Density ◽  
Flat Band ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Flat Band Voltage ◽  
Voltage Shift

Flat-band voltage shift in metal-gate/high- k /Si stacks

2011 ◽  
Vol 20 (9) ◽  
pp. 097303 ◽  
Author(s):  
An-Ping Huang ◽  
Xiao-Hu Zheng ◽  
Zhi-Song Xiao ◽  
Zhi-Chao Yang ◽  
Mei Wang ◽  
...  
Keyword(s):  
Flat Band ◽  
Flat Band Voltage ◽  
Metal Gate ◽  
Voltage Shift ◽  
High K

A Formation of SiO2/4H-SiC Interface by Oxidizing Deposited Poly-Si and High Temperature Hydrogen Annealing

1999 ◽  
Vol 572 ◽  
Author(s):  
K. Fukuda ◽  
K. Sakamoto ◽  
K. Nagai ◽  
T. Sekigawa ◽  
S. Yoshida ◽  
...  
Keyword(s):  
High Temperature ◽  
Oxidation Rate ◽  
Vacuum Annealing ◽  
Low Pressure ◽  
Oxidation Temperature ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Hydrogen Annealing ◽  
Voltage Shift ◽  
Mos Structure

ABSTRACTA formation of SiO2/4H-SiC interfaces by oxidizing deposited poly-Si on a 4H-SiC substrate and high temperature hydrogen annealing at low pressure ( 8.5×102 Pa ) has been investigated. The oxidation rate of deposited poly-Si was approximately 100 times faster than that of a SiC. Hydrogen annealing more effectively reduced the flat band voltage shift ( ΔVfb ) of the 4H-SiC MOS structure than argon and vacuum annealing. Moreover, the good SiO2/4H-SiC interface was formed because ΔVfb decreased as the oxidation temperature increased.

Flat band voltage shift and oxide properties after rapid thermal annealing

2001 ◽  
Vol 41 (7) ◽  
pp. 1053-1056 ◽  
Author(s):  
B.J. O'Sullivan ◽  
P.K. Hurley ◽  
F.N. Cubaynes ◽  
P.A. Stolk ◽  
F.P. Widdershoven
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Voltage Shift
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