Influence of oxygen on trap-limited diffusion of hydrogen in proton-irradiated n-type silicon for power devices

2021 ◽  
Vol 129 (2) ◽  
pp. 025701
Author(s):  
Akira Kiyoi ◽  
Naoyuki Kawabata ◽  
Katsumi Nakamura ◽  
Yasufumi Fujiwara
Keyword(s):  
Power Devices ◽  
Type Silicon ◽  
Diffusion Of Hydrogen ◽  
Limited Diffusion

Trap limited diffusion of hydrogen in boron-doped diamond

2003 ◽  
Vol 12 (3-7) ◽  
pp. 647-651 ◽  
Author(s):  
Z. Teukam ◽  
D. Ballutaud ◽  
F. Jomard ◽  
J. Chevallier ◽  
M. Bernard ◽  
...  
Keyword(s):  
Boron Doped Diamond ◽  
Boron Doped ◽  
Diffusion Of Hydrogen ◽  
Limited Diffusion

Backside Nickel Based Ohmic Contacts to n-Type Silicon Carbide

2008 ◽  
Vol 600-603 ◽  
pp. 635-638 ◽  
Author(s):  
Reza Ghandi ◽  
Hyung Seok Lee ◽  
Martin Domeij ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Annealing Temperature ◽  
Contact Resistivity ◽  
Optimum Conditions ◽  
Power Devices ◽  
High Quality ◽  
Temperature Range ◽  
Type Silicon ◽  
Different Temperatures

This work focuses on Ni ohmic contacts to the C-face (backside) of n-type 4H-SiC substrates. Low-resistive ohmic contacts to the wafer backside are important especially for vertical power devices. Ni contacts were deposited using E-beam evaporation and annealed at different temperatures (700-1050 °C) in RTP to obtain optimum conditions for forming low resistive ohmic contacts. Our results indicate that 1 min annealing at temperatures between 950 and 1000 °C provides high quality ohmic contacts with a contact resistivity of 2.3x10-5 Ωcm2. Also our XRD results show that different Ni silicide phases appear in this annealing temperature range.

Transformation of Gold in N-Type Silicon from a New Deep Level to the Gold Acceptor Level

1992 ◽  
Vol 262 ◽  
Author(s):  
Einar Ö. SveinbjöRnsson ◽  
Olof Engström
Keyword(s):  
Deep Level ◽  
Depth Profiling ◽  
Sample Surface ◽  
Acceptor Level ◽  
Electron Capture Cross Section ◽  
Acceptor Concentration ◽  
Type Silicon ◽  
Float Zone ◽  
Transient Spectroscopy ◽  
Diffusion Of Hydrogen

ABSTRACTUsing deep level transient spectroscopy (DLTS) on gold-doped n-type Czochralski (CZ) and float zone (FZ) silicon we observe a new gold-related acceptor level (G) with an activation energy σn= 0.19 eV and an electron capture cross section On = 1–10-17 cm2. The center anneals out at a temperature of 250°C, simultaneously as the gold acceptor concentration increases. Annealing at temperatures below 250°C does not reverse this process. However, etching a few microns off the sample surface using HF:HNO3 based etch reforms the G center and the gold acceptor concentration decreases accordingly. From DLTS depth-profiling we determine that the new center is only found at depths less than 5 μm, and in the same region we observe neutralization of phosphorus dopants and a reduction in the gold acceptor concentration.We propose that in-diffusion of hydrogen during the etching process is responsible for the three observed transitions, i.e. neutralization of both phosphorus donors and gold acceptors and formation of the G center. We suggest that there are (at least) two possible Au-H complex centers, one which is electrically inactive and another which gives rise to an acceptor level (ΔE = 0.19 eV) in the bandgap of n-type silicon. The electrically active center anneals out at 250°C while the electrically inactive one is more stable and has been observed earlier in remote plasma hydrogenation experiments performed at 150–350°C.

Diffusion of Hydrogen in Amorphous Silicon in the Low Concentration Regime

1993 ◽  
Vol 297 ◽  
Author(s):  
J.A. Roth ◽  
G.L. Olson ◽  
D.C. Jacobson ◽  
J.M. Poate
Keyword(s):  
Activation Energy ◽  
Hydrogen Diffusion ◽  
Deep Trap ◽  
Alternative Mechanism ◽  
Diffusion Kinetics ◽  
High Activation ◽  
Exponential Factor ◽  
Low Concentration ◽  
Diffusion Of Hydrogen ◽  
Limited Diffusion

We report the first measurements of hydrogen diffusion kinetics in a-Si in the regime of low H concentration (<2×l019 cm−3). The results differ substantially from the diffusion behavior typically observed in hydrogenated a-Si:H at H concentrations >1020 cm−3. The activation energy and pre-exponential factor for low-concentration H diffusion are found to be 2.70 ± 0.02 eV and 2.2 × 104 cm2s−1, respectively, and are shown to be independent of both annealing time and H concentration. It is difficult to reconcile the combination of high activation energy and large pre-exponential factor with a simple deep-trap-limited diffusion model. Consequently, an alternative mechanism for H diffusion involving the migration of dangling bonds coupled with a H bond-switching step is proposed.

scholarly journals Model based prediction of the trap limited diffusion of hydrogen in post-hydrogenated amorphous silicon

2016 ◽  
Vol 10 (11) ◽  
pp. 828-832 ◽  
Author(s):  
Sebastian Gerke ◽  
Hans-Werner Becker ◽  
Detlef Rogalla ◽  
Reinhart Job ◽  
Barbara Terheiden
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Model Based ◽  
Hydrogenated Amorphous ◽  
Diffusion Of Hydrogen ◽  
Limited Diffusion

Trap-limited diffusion of hydrogen in Zn-doped GaAs

1999 ◽  
Vol 60 (3) ◽  
pp. 1752-1758 ◽  
Author(s):  
M. C. Wagener ◽  
J. R. Botha ◽  
A. W. R. Leitch
Keyword(s):  
Diffusion Of Hydrogen ◽  
Limited Diffusion

Transient Observation of Peltier Effect for PtSix-Coated n-Type Silicon: Cooler for 4H-SiC-Based Power Devices

2017 ◽  
Vol 6 (3) ◽  
pp. N3089-N3094
Author(s):  
Yutaka Furubayashi ◽  
Takafumi Tanehira ◽  
Kei Yonemori ◽  
Nobuhide Seo ◽  
Shin-Ichiro Kuroki
Keyword(s):  
Peltier Effect ◽  
Power Devices ◽  
Type Silicon

scholarly journals Anisotropic and trap-limited diffusion of hydrogen/deuterium in monoclinic gallium oxide single crystals

2020 ◽  
Vol 117 (23) ◽  
pp. 232106
Author(s):  
Vilde M. Reinertsen ◽  
Philip M. Weiser ◽  
Ymir K. Frodason ◽  
Marianne E. Bathen ◽  
Lasse Vines ◽  
...  
Keyword(s):  
Single Crystals ◽  
Gallium Oxide ◽  
Hydrogen Deuterium ◽  
Diffusion Of Hydrogen ◽  
Limited Diffusion
Sign in / Sign up

Export Citation Format

Share Document