scholarly journals Anisotropic and trap-limited diffusion of hydrogen/deuterium in monoclinic gallium oxide single crystals

2020 ◽  
Vol 117 (23) ◽  
pp. 232106
Author(s):  
Vilde M. Reinertsen ◽  
Philip M. Weiser ◽  
Ymir K. Frodason ◽  
Marianne E. Bathen ◽  
Lasse Vines ◽  
...  
Keyword(s):  
Single Crystals ◽  
Gallium Oxide ◽  
Hydrogen Deuterium ◽  
Diffusion Of Hydrogen ◽  
Limited Diffusion

Structural, thermal and dielectric properties of cobaltous malonate single crystals grown in limited diffusion media

2010 ◽  
Vol 405 (22) ◽  
pp. 4673-4677 ◽  
Author(s):  
A. Lincy ◽  
V. Mahalakshmi ◽  
A.J. Tinto ◽  
J. Thomas ◽  
K.V. Saban
Keyword(s):  
Dielectric Properties ◽  
Single Crystals ◽  
Diffusion Media ◽  
Limited Diffusion

Trap limited diffusion of hydrogen in boron-doped diamond

2003 ◽  
Vol 12 (3-7) ◽  
pp. 647-651 ◽  
Author(s):  
Z. Teukam ◽  
D. Ballutaud ◽  
F. Jomard ◽  
J. Chevallier ◽  
M. Bernard ◽  
...  
Keyword(s):  
Boron Doped Diamond ◽  
Boron Doped ◽  
Diffusion Of Hydrogen ◽  
Limited Diffusion

Overvoltage and diffusion through iron and palladium

1959 ◽  
Vol 253 (1272) ◽  
pp. 6-15 ◽  
Keyword(s):  
Crystal Lattice ◽  
Single Crystals ◽  
Molecular Hydrogen ◽  
X Ray Diffraction ◽  
Palladium Hydride ◽  
X Ray ◽  
Crystallographic Planes ◽  
And Diffusion ◽  
Diffusion Of Hydrogen ◽  
Crystal Boundaries

Observations are recorded on X-ray spectra diffracted from cathodes of iron and palladium during actual discharge and diffusion of hydrogen. For iron, no expansion of the crystal lattice greater than 0.0002 Å could be observed during such diffusion, and the broadening observed of X-ray diffraction spectra indicated no preferred crystallographic planes for the evolution of molecular hydrogen. Blisters were formed across the faces of single crystals of iron, when made a cathode, indicating that diffusion of hydrogen occurs through the crystal grains rather than along crystal boundaries. For palladium, an expansion was observed during actual electrolysis to an extent of 0.0170 + 0.0002 Å. On ceasing electrolysis, there was reversion to a less-expanded lattice of palladium hydride. Broadening of the reflexions observed during electrolysis indicated no preferred planes for evolution of hydrogen. The significance of these findings is discussed for mechanisms of overvoltage and of diffusion of hydrogen through metals.

scholarly journals Anisotropy, phonon modes, and free charge carrier parameters in monoclinicβ-gallium oxide single crystals

2016 ◽  
Vol 93 (12) ◽  
Author(s):  
M. Schubert ◽  
R. Korlacki ◽  
S. Knight ◽  
T. Hofmann ◽  
S. Schöche ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Single Crystals ◽  
Gallium Oxide ◽  
Free Charge Carrier ◽  
Free Charge ◽  
Phonon Modes

Diffusion of hydrogen, deuterium and tritium in tetrafluoroethylene

1981 ◽  
Vol 99 (2-3) ◽  
pp. 320-323 ◽  
Author(s):  
Kuniaki Watanabe ◽  
Masao Matsuyama ◽  
Kan Ashida ◽  
Toyosaburo Takeuchi
Keyword(s):  
Hydrogen Deuterium ◽  
Diffusion Of Hydrogen

Diffusion of Hydrogen in Amorphous Silicon in the Low Concentration Regime

1993 ◽  
Vol 297 ◽  
Author(s):  
J.A. Roth ◽  
G.L. Olson ◽  
D.C. Jacobson ◽  
J.M. Poate
Keyword(s):  
Activation Energy ◽  
Hydrogen Diffusion ◽  
Deep Trap ◽  
Alternative Mechanism ◽  
Diffusion Kinetics ◽  
High Activation ◽  
Exponential Factor ◽  
Low Concentration ◽  
Diffusion Of Hydrogen ◽  
Limited Diffusion

We report the first measurements of hydrogen diffusion kinetics in a-Si in the regime of low H concentration (<2×l019 cm−3). The results differ substantially from the diffusion behavior typically observed in hydrogenated a-Si:H at H concentrations >1020 cm−3. The activation energy and pre-exponential factor for low-concentration H diffusion are found to be 2.70 ± 0.02 eV and 2.2 × 104 cm2s−1, respectively, and are shown to be independent of both annealing time and H concentration. It is difficult to reconcile the combination of high activation energy and large pre-exponential factor with a simple deep-trap-limited diffusion model. Consequently, an alternative mechanism for H diffusion involving the migration of dangling bonds coupled with a H bond-switching step is proposed.

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