Transient Observation of Peltier Effect for PtSix-Coated n-Type Silicon: Cooler for 4H-SiC-Based Power Devices

2017 ◽  
Vol 6 (3) ◽  
pp. N3089-N3094
Author(s):  
Yutaka Furubayashi ◽  
Takafumi Tanehira ◽  
Kei Yonemori ◽  
Nobuhide Seo ◽  
Shin-Ichiro Kuroki
Keyword(s):  
Peltier Effect ◽  
Power Devices ◽  
Type Silicon

Backside Nickel Based Ohmic Contacts to n-Type Silicon Carbide

2008 ◽  
Vol 600-603 ◽  
pp. 635-638 ◽  
Author(s):  
Reza Ghandi ◽  
Hyung Seok Lee ◽  
Martin Domeij ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Annealing Temperature ◽  
Contact Resistivity ◽  
Optimum Conditions ◽  
Power Devices ◽  
High Quality ◽  
Temperature Range ◽  
Type Silicon ◽  
Different Temperatures

This work focuses on Ni ohmic contacts to the C-face (backside) of n-type 4H-SiC substrates. Low-resistive ohmic contacts to the wafer backside are important especially for vertical power devices. Ni contacts were deposited using E-beam evaporation and annealed at different temperatures (700-1050 °C) in RTP to obtain optimum conditions for forming low resistive ohmic contacts. Our results indicate that 1 min annealing at temperatures between 950 and 1000 °C provides high quality ohmic contacts with a contact resistivity of 2.3x10-5 Ωcm2. Also our XRD results show that different Ni silicide phases appear in this annealing temperature range.

(Invited)Peltier Effect of Silicon for Cooling 4H-SiC-Based Power Devices

2017 ◽  
Vol 80 (5) ◽  
pp. 77-85 ◽  
Author(s):  
Yutaka Furubayashi ◽  
Takafumi Tanehira ◽  
Atsushi Yamamoto ◽  
Kei Yonemori ◽  
Seiji Miyoshi ◽  
...  
Keyword(s):  
Peltier Effect ◽  
Power Devices

Influence of oxygen on trap-limited diffusion of hydrogen in proton-irradiated n-type silicon for power devices

2021 ◽  
Vol 129 (2) ◽  
pp. 025701
Author(s):  
Akira Kiyoi ◽  
Naoyuki Kawabata ◽  
Katsumi Nakamura ◽  
Yasufumi Fujiwara
Keyword(s):  
Power Devices ◽  
Type Silicon ◽  
Diffusion Of Hydrogen ◽  
Limited Diffusion

A Long Bar Type Silicon Resonator with a High Quality Factor

2014 ◽  
Vol 134 (2) ◽  
pp. 26-31 ◽  
Author(s):  
Nguyen Van Toan ◽  
Masaya Toda ◽  
Yusuke Kawai ◽  
Takahito Ono
Keyword(s):  
Quality Factor ◽  
High Quality Factor ◽  
High Quality ◽  
Type Silicon ◽  
Silicon Resonator

Three-Dimensional Wiring Fabricating Process of Cantilever-type Silicon Probe for Semiconductor Testing

2015 ◽  
Vol 135 (8) ◽  
pp. 349-354
Author(s):  
Takanori Aono ◽  
Masatoshi Kanamaru ◽  
Ryuji Kohno ◽  
Atsushi Hosogane
Keyword(s):  
Three Dimensional ◽  
Type Silicon

Contacting Diffusion with FIB for Backside Circuit Edit—Procedures and Material Analysis

2005 ◽  
Author(s):  
U. Kerst ◽  
P. Sadewater ◽  
R. Schlangen ◽  
C. Boit ◽  
R. Leihkauf ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Electrical Properties ◽  
Process Parameters ◽  
Thermal Effects ◽  
Silicon Surface ◽  
Ohmic Contacts ◽  
Ion Beam ◽  
Schottky Barriers ◽  
Material Analysis ◽  
Type Silicon

Abstract The feasibility of low-ohmic FIB contacts to silicon with a localized silicidation was presented at ISTFA 2004 [1]. We have systematically explored options in contacting diffusions with FIB metal depositions directly. A demonstration of a 200nm x 200nm contact on source/drain diffusion level is given. The remaining article focuses on the properties of FIB deposited contacts on differently doped n-type Silicon. After the ion beam assisted platinum deposition a silicide was formed using a forming current in two configurations. The electrical properties of the contacts are compared to furnace anneal standards. Parameters of Schottky-barriers and thermal effects of the formation current are studied with numerical simulation. TEM images and material analysis of the low ohmic contacts show a Pt-silicide formed on a silicon surface with no visible defects. The findings indicate which process parameters need a more detailed investigation in order to establish values for a practical process.

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