scholarly journals Model based prediction of the trap limited diffusion of hydrogen in post-hydrogenated amorphous silicon

2016 ◽  
Vol 10 (11) ◽  
pp. 828-832 ◽  
Author(s):  
Sebastian Gerke ◽  
Hans-Werner Becker ◽  
Detlef Rogalla ◽  
Reinhart Job ◽  
Barbara Terheiden
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Model Based ◽  
Hydrogenated Amorphous ◽  
Diffusion Of Hydrogen ◽  
Limited Diffusion

Kinetics of Growth and Recovery of Light-Induced Defects Under High-Intensity Illumination

1992 ◽  
Vol 258 ◽  
Author(s):  
Masao Isomura ◽  
Sigurd Wagner
Keyword(s):  
Light Intensity ◽  
Amorphous Silicon ◽  
High Intensity ◽  
Hydrogenated Amorphous Silicon ◽  
Increased Sensitivity ◽  
Induced Defects ◽  
Hydrogenated Amorphous ◽  
Kinetics Of ◽  
Diffusion Of Hydrogen

ABSTRACTWe report a study of the rates of generation and of annealing of the light-induced defects in hydrogenated amorphous silicon (a-Si:H). The rates of generation are found to be sensitive to temperature when the light intensity is high. This increased sensitivity to temperature at high rates suggests that a temperature-activated process such as hydrogen motion controls the rates of generation more when they are high. The rate of annealing at 130°C is strongly accelerated by illumination, and depends strongly on the light intensity. This may be explained by the diffusion of hydrogen, accelerated by excess carriers.

Anomalous Diffusion of Hydrogen and the Dependence of the Diffusion Constants on Hydrogen Content in Hydrogenated Amorphous Silicon

1992 ◽  
Vol 258 ◽  
Author(s):  
R. Shinar ◽  
H. Jia ◽  
X.-L. Wu ◽  
J. Shinar
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Diffusion Constant ◽  
Relaxation Processes ◽  
Diffusion Constants ◽  
Amorphous Network ◽  
Sputter Deposited ◽  
Hydrogenated Amorphous ◽  
Deposited Film ◽  
Diffusion Of Hydrogen

ABSTRACTThe diffusion constant of hydrogen DH(t) in hydrogenated amorphous silicon (a-Si:H) is strongly dependent on the Si-bonded H content CH of the films. It increases by over four orders of magnitude for CH ranging from 1 to 19 at. %. In an rf sputter-deposited film of CH ∼5 at. % it increases with time at 300 ≤ T ≤ 362°C. The dispersion parameter α in DH(t) = D∞ (ωt)-αis thus negative. This observation and the increase of α with T above a sample-dependent temperature Tτ are discussed in relation to low temperature structural relaxation processes in the amorphous network.

BONDING IN HYDROGENATED AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

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