Study of charge processes in gate dielectrics of MOS structures under concurrent influence of high-field tunnel injection of electrons and ionization radiation

2020 ◽  
Author(s):  
Dmitrii Andreev ◽  
Vladimir Maslovsky ◽  
Vladimir Andreev ◽  
Alexander Stolyarov
Keyword(s):  
High Field ◽  
Gate Dielectrics ◽  
Ionization Radiation ◽  
Mos Structures ◽  
Tunnel Injection

scholarly journals Use of High-Field Electron Injection into Dielectrics to Enhance Functional Capabilities of Radiation MOS Sensors

Sensors ◽  
2020 ◽  
Vol 20 (8) ◽  
pp. 2382
Author(s):  
Dmitrii V. Andreev ◽  
Gennady G. Bondarenko ◽  
Vladimir V. Andreev ◽  
Alexander A. Stolyarov
Keyword(s):  
High Field ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Particle Radiation ◽  
Charge Effects ◽  
Functional Capabilities ◽  
Ionization Radiation ◽  
Γ Rays ◽  
Radiation Sensors ◽  
Tunnel Injection

The paper suggests a design of radiation sensors based on metal-oxide-semiconductor (MOS) structures and p-channel radiation sensitive field effect transistors (RADFET) which are capable to function under conditions of high-field tunnel injection of electrons into the dielectric. We demonstrate that under these conditions, the dose sensitivity of the sensor can be significantly raised, and, besides, the intensity of radiation can be monitored in situ on the basis of determining the ionization current arising in the dielectric film. The paper proposes the model allowing to make a quantitative analysis of charge effects taking place in the radiation MOS sensors under concurrent influence of ionization radiation and high-field tunnel injection of electrons. Use of the model allows to properly interpret results of the radiation control. In order to test the designed sensors experimentally, we have utilized γ-rays, α-particle radiation, and proton beams. We have acquired experimental results verifying the enhancement of function capabilities of the radiation MOS sensors when these have been under high-field injection of electrons into the dielectric.

Characterization of GaN MOS Structures Using Photoanodically Grown Oxides with Respect to FET Devices

2000 ◽  
Vol 639 ◽  
Author(s):  
D. Mistele ◽  
T. Rotter ◽  
R. Ferretti ◽  
F. Fedler ◽  
H. Klausing ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Photoelectrochemical Cell ◽  
Oxide Growth ◽  
Metal Source ◽  
Device Applications ◽  
Small Density ◽  
Wet Chemical ◽  
Mos Structures ◽  
Strong Depletion

ABSTRACTPhotoanodically grown Ga2O3 layers were characterized with respect to their suitability as gate dielectrics for GaN based MOSFET Device applications. The Ga2O3 layers were produced in a photoelectrochemical cell using aqueous solutions of KOH. IV characterization of MOS structures show insulating behavior of the oxide layers and CV measurements indicate a small density of states at the oxide/GaN interface. Integrating the wet chemical oxide growth in a MOSFET device fabricating process includes tungsten as gate metal together with H2O2 as etching solution for the gate metal. Source/drain areas were made free of oxide by the alkaline developer of a conventional lithographic step and metallization was done by using the liftoff technique. MOS structures show no inversion mode but strong depletion in reverse biasing mode.

Comparison of Defect Generation by irradiation and High Field Stressing in MOS Structures

1990 ◽  
Vol 36 (3-4) ◽  
pp. 198-202
Author(s):  
R Lal ◽  
R M Patrikar ◽  
D Sarkar ◽  
J Vasi
Keyword(s):  
High Field ◽  
Defect Generation ◽  
Mos Structures

Improved method for the oxide thickness extraction in MOS structures with ultrathin gate dielectrics

2000 ◽  
Vol 13 (2) ◽  
pp. 152-158 ◽  
Author(s):  
G. Ghibaudo ◽  
S. Bruyere ◽  
T. Devoivre ◽  
B. DeSalvo ◽  
E. Vincent
Keyword(s):  
Gate Dielectrics ◽  
Oxide Thickness ◽  
Improved Method ◽  
Mos Structures
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