Charge instability in mis structures with dielectric silicon dioxide-phosphoro-silicate glass layers under conditions of high-field tunnel injection

1999 ◽  
Vol 42 (5) ◽  
pp. 485-489 ◽  
Author(s):  
G. G. Bondarenko ◽  
V. V. Andreev ◽  
V. G. Baryshev ◽  
A. A. Stolyarov
Keyword(s):  
Silicon Dioxide ◽  
Silicate Glass ◽  
High Field ◽  
Charge Instability ◽  
Tunnel Injection ◽  
Mis Structures

Comparison of High Field Characteristics of SiO2 and AIN Gate Insulators in 6H SiC MOS Capacitors

1998 ◽  
Vol 512 ◽  
Author(s):  
V. P. Madangarli ◽  
T. S. Sudarshan ◽  
C. C. Tin
Keyword(s):  
Silicon Dioxide ◽  
Temperature Profile ◽  
High Field ◽  
Breakdown Strength ◽  
Processing Conditions ◽  
Mos Capacitors ◽  
Influence Of Temperature ◽  
Post Annealing ◽  
Minute Post ◽  
Thermally Grown

ABSTRACTUsing a fast ramp response technique, the high field characteristics, specifically the breakdown strength, of thermally grown silicon-dioxide (SiO2) and MOCVD grown aluminum-nitride (AIN), on n-type 6H-SiC epilayers is obtained as a function of three different processing conditions for the insulator growth. Significant improvement in the breakdown strength of thermally grown SiO2 after a 30 minute post annealing at 400°C in nitrogen ambient is reported. Further, the influence of temperature profile during the AIN growth on the breakdown strength is reported.

Trapping of negative and positive charges in Ge+ ion implanted silicon dioxide layers subjected to high-field electron injection

2003 ◽  
Vol 94 (7) ◽  
pp. 4440-4448 ◽  
Author(s):  
A. N. Nazarov ◽  
T. Gebel ◽  
L. Rebohle ◽  
W. Skorupa ◽  
I. N. Osiyuk ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
High Field ◽  
Electron Injection ◽  
Field Electron ◽  
Ion Implanted

scholarly journals Use of High-Field Electron Injection into Dielectrics to Enhance Functional Capabilities of Radiation MOS Sensors

Sensors ◽  
2020 ◽  
Vol 20 (8) ◽  
pp. 2382
Author(s):  
Dmitrii V. Andreev ◽  
Gennady G. Bondarenko ◽  
Vladimir V. Andreev ◽  
Alexander A. Stolyarov
Keyword(s):  
High Field ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Particle Radiation ◽  
Charge Effects ◽  
Functional Capabilities ◽  
Ionization Radiation ◽  
Γ Rays ◽  
Radiation Sensors ◽  
Tunnel Injection

The paper suggests a design of radiation sensors based on metal-oxide-semiconductor (MOS) structures and p-channel radiation sensitive field effect transistors (RADFET) which are capable to function under conditions of high-field tunnel injection of electrons into the dielectric. We demonstrate that under these conditions, the dose sensitivity of the sensor can be significantly raised, and, besides, the intensity of radiation can be monitored in situ on the basis of determining the ionization current arising in the dielectric film. The paper proposes the model allowing to make a quantitative analysis of charge effects taking place in the radiation MOS sensors under concurrent influence of ionization radiation and high-field tunnel injection of electrons. Use of the model allows to properly interpret results of the radiation control. In order to test the designed sensors experimentally, we have utilized γ-rays, α-particle radiation, and proton beams. We have acquired experimental results verifying the enhancement of function capabilities of the radiation MOS sensors when these have been under high-field injection of electrons into the dielectric.

On the hardness of transparent coatings deposited on silicate glass from silicon dioxide sols with addition of titanium and zirconium oxides

2015 ◽  
Vol 88 (5) ◽  
pp. 746-750
Author(s):  
B. B. Troitskii ◽  
V. N. Denisova ◽  
M. A. Novikova ◽  
M. A. Lopatin ◽  
T. I. Lopatina ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Silicate Glass ◽  
Zirconium Oxides ◽  
Transparent Coatings

Generation of Hole Traps in Silicon Dioxide Under Fowler-Nordheim Stress

1996 ◽  
Vol 428 ◽  
Author(s):  
T. Brożek ◽  
Y. D. Chan ◽  
C. R. Viswanathan
Keyword(s):  
Silicon Dioxide ◽  
High Field ◽  
Silicon Oxide ◽  
Electron Injection ◽  
Oxide Semiconductor ◽  
Hole Injection ◽  
Oxide Interface ◽  
Report Generation ◽  
Oxide Layers ◽  
Hole Trapping

AbstractHigh field electron injection in silicon oxide layers in metal-oxide-semiconductor system is widely known to degrade thin silicon oxide layers and the silicon-oxide interface, eventually leading to catastrophic oxide breakdown. In this work we report generation of hole traps under high-field stressing of thermal silicon dioxide layers on silicon. Excess hole trapping on newly generated hole traps is observed by substrate hot-hole injection in 9 nm oxide PMOS transistors after high-field Fowler-Nordheim stress followed by standard post-metallization annealing in nitrogen. The concentration of generated traps is stress-polarity dependent and increases with electron fluence during degrading stress. Relaxation behavior under switching oxide fields indicates that the nature of hole trapping sites is different from anomalous positive charge centers. A correlation of density of generated hole traps with the amount of generated electron traps shows that both types of traps are effectively generated in the oxide layer under Fowler-Nordheim tunneling electron injection.

Obtaining antireflecting coatings from mesoporous silicon dioxide on silicate glass at lowered temperatures of baking of gel

2013 ◽  
Vol 39 (5) ◽  
pp. 499-508 ◽  
Author(s):  
B. B. Troitskii ◽  
A. A. Lokteva ◽  
M. A. Lopatin ◽  
V. N. Denisova ◽  
M. A. Novikova ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Silicate Glass ◽  
Mesoporous Silicon ◽  
Mesoporous Silicon Dioxide
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