Study of SILC and interface trap generation due to high field stressing and its operating temperature dependence in 2.2 nm gate dielectrics
2002 ◽
Vol 49
(4)
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pp. 699-701
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Keyword(s):
2010 ◽
Vol 200
(7)
◽
pp. 072050
Keyword(s):
2010 ◽
Vol 82
(6)
◽
pp. 1329-1336
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Keyword(s):
Keyword(s):
Keyword(s):
Keyword(s):
2000 ◽
Vol 14
(25n26)
◽
pp. 883-897
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Keyword(s):
2016 ◽
Vol 820
◽
pp. 224-229
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