Double-sided and single-sided polished 6H-SiC wafers with subsurface damage layer studied by Mueller matrix ellipsometry

2020 ◽  
Vol 128 (23) ◽  
pp. 235304
Author(s):  
Huihui Li ◽  
Changcai Cui ◽  
Subiao Bian ◽  
Jing Lu ◽  
Xipeng Xu ◽  
...  
Keyword(s):  
Mueller Matrix ◽  
Subsurface Damage ◽  
Damage Layer

scholarly journals Laser-assisted grinding of reaction-bonded SiC

2020 ◽  
Vol 3 (2) ◽  
pp. 93-98
Author(s):  
Xichun Luo ◽  
Zhipeng Li ◽  
Wenlong Chang ◽  
Yukui Cai ◽  
Jining Sun ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Process Development ◽  
Thermal Control ◽  
Subsurface Damage ◽  
Experimental Comparison ◽  
Depth Of Cut ◽  
Machined Surface ◽  
Control Approach ◽  
Damage Layer ◽  
Conventional Grinding

The article presents the development of a novel laser-assisted grinding (LAG) process to reduce surface roughness and subsurface damage in grinding reaction-bonded silicon carbide (RB-SiC). A thermal control approach is proposed to facilitate the process development, in which a two-temperature model (TTM) is applied to control the required laser power to thermal softening of RB-SiC prior to the grinding operation without melting the workpiece or leaving undesirable microstructural alteration. Fourier’s law is adopted to obtain the thermal gradient for verification. An experimental comparison of conventional grinding and LAG shows significant reduction of machined surface roughness (37%–40%) and depth of subsurface damage layer (22%–50.6%) using the thermal control approach under the same grinding conditions. It also shows high specific grinding energy 1.5 times that in conventional grinding at the same depth of cut, which accounts for the reduction of subsurface damage as it provides enough energy to promote ductile-regime material removal.

Experimental Study on the Subsurface Damage in the Ultrasonic Vibration Grinding of Nano-ZrO2 Ceramics

2010 ◽  
Vol 42 ◽  
pp. 143-146 ◽  
Author(s):  
Ming Li Zhao ◽  
Bo Zhao ◽  
Yu Qing Wang ◽  
Ling Zhi Kong
Keyword(s):  
Ultrasonic Vibration ◽  
Vibration Mode ◽  
Longitudinal Vibration ◽  
Subsurface Damage ◽  
Bending Vibration ◽  
Effect Factor ◽  
Damage Layer ◽  
Grinding Method ◽  
Ultrasonic Grinding ◽  
Longitudinal Vibration Mode

Because of the hard-brittle character of ceramics, the ultrasonic vibration grinding method was used in the experiment. And the effects of ultrasonic vibration on the subsurface damage were analyzed in this paper. The experiment indicates that the frequency of 35 KHz will be more suitable for ultrasonic grinding ceramics, and under this frequency the damage layer thickness will be controlled in 11μm. The effect of vibration amplitude on the subsurface damage was also analyzed in this paper. The experiment results show that smaller amplitude will impair the efficiency of ultrasonic vibration grinding. The ultrasonic vibration mode was also an effect factor to the subsurface damage. Only the longitudinal vibration mode can improve the subsurface quality, while the bending vibration and torsion vibration will lead to the contrary results.

Research on the Distribution of Subsurface Damage Layer on SiC Substrate After Double-Side Lapping

2015 ◽  
Vol 14 (01) ◽  
pp. 1-10 ◽  
Author(s):  
Hai Zhou ◽  
Xiaoming Xu ◽  
Xiang Gao ◽  
Yuan Zhang
Keyword(s):  
Silicon Carbide ◽  
Surface Damage ◽  
Damage Mechanism ◽  
Processing Parameters ◽  
Subsurface Damage ◽  
Shape Measurement ◽  
Theoretic Model ◽  
Damage Layer ◽  
Silicon Carbide Substrate ◽  
Measurement Laser

In this paper, the surface damage mechanism of silicon carbide lapping process was studied. A theoretic model between the depth of subsurface damage and surface scratch of silicon carbide substrate double-side lapping has been built. An experiment of two-sided lapping combining VK-X100/X200 shape measurement laser microscopy system with HF mild chemical etching experiment on SiC substrate was processed to obtain the distribution of surface scratch and subsurface damage layer with depth. The study shows that the thickness of subsurface damage layer decreases as the depth increases, which centrally distributes in the depth of 0–15.6 μm from outer fragmentation and scratch damage layer, which accounted for about 98.6%. The result can help us to optimize processing parameters of silicon carbide substrate double-side lapping to control the depth of subsurface damage layer.

Research on Subsurface Damage of Lapping Sapphire with Diamond Fixed Abrasive

2020 ◽  
Vol 866 ◽  
pp. 143-151
Author(s):  
Jian Bin Wang ◽  
Yong Qiang Tong ◽  
Ben Chi Jiang ◽  
Da Shu ◽  
Gang Wang
Keyword(s):  
Surface Quality ◽  
Surface Damage ◽  
Subsurface Damage ◽  
Indentation Fracture ◽  
Damage Layer ◽  
Damage Depth ◽  
The Difference ◽  
Fixed Abrasive ◽  
Free Abrasive

The depth of surface/subsurface damage layer is the key index of surface quality of sapphire. In this paper, that depth model of the surface/subsurface damage lay characterized by the crack length was established according to the mechanical theory of indentation fracture. The cutting relation between abrasive and workpiece and the difference of the depth of subsurface damage crack are analyzed. It is preliminarily estimated that the length of sub-surface damage crack of free abrasive sapphire is about 2.46 times that of fixed abrasive when considering only the contact hardness of abrasive grain under static load. Diamond abrasives with size of W20 were adopted to carry out experiments in free and fixed lapping methods. The results show that the surface/subsurface damage depth is 9.87μm and 3.63μm respectively. It is easier to obtain good sub-surface quality by using the fixed abrasive method than free abrasive at the same particle size.

Ultrasmooth Polishing with Sub-Angstrom Roughness on Fused Silica Surface

2014 ◽  
Vol 651-653 ◽  
pp. 150-156
Author(s):  
Jun Lin Wang
Keyword(s):  
Spatial Frequency ◽  
Silica Surface ◽  
High Spatial Frequency ◽  
Fused Silica ◽  
Subsurface Damage ◽  
Curved Surface ◽  
Damage Layer ◽  
Hydrodynamic Mechanism

In order to superpolish fused silica surface, a non-contact polishing method is applied, which is called as computer numerical-controlled (CNC) micro-jet polishing (MJP) technology developed on the base of the hydrodynamic mechanism. In this paper, both the theory and the techniques about this new polishing technology are introduced in detail, and the curved surface of fused silica was polished. The results demonstrate that no new scratches were produced when the nanoparticles removed the atoms away from the surface. The roughness decreased monotonously with the removal of subsurface damage layer. And ideal Ultrasmooth surface without scratches was achieved by MJP with waveness less than 0.2nmrmsRMS while the high-spatial frequency roughness less than 0.1nmrmsRMS (sub-angstrom).

Micro-Raman Spectral Analysis of the Subsurface Damage Layer in Machined Silicon Wafers

2000 ◽  
Vol 15 (7) ◽  
pp. 1441-1444 ◽  
Author(s):  
Long-Qing Chen ◽  
Xin Zhang ◽  
Tong-Yi Zhang ◽  
H. Y. Lin ◽  
Sanboh Lee
Keyword(s):  
Subsurface Damage ◽  
Silicon Wafers ◽  
Intense Band ◽  
Band Shift ◽  
Etching Depth ◽  
Micro Raman Spectroscopy ◽  
Damage Layer ◽  
Transmission Electron ◽  
Raman Spectral ◽  
Raman Spectral Analysis

In the present work we studied the depth of damage layer in machined silicon wafers that was incorporated with chemical etching using micro-Raman spectroscopy. Subsurface damage causes changes in the shape and intensity for the shoulder (450–570 cm−1) of the most intense band (519 cm−1) and the second band (300 cm−1) regions of the Raman spectrum. Etching reduces the thickness of the damage layer and, hence, the intensities at the shoulder and the second band. The intensities at the shoulder and the second band become stable when the damage layer is completely etched out. The shoulder consists of two Gaussian profiles: the major and the minor. The band for the major profile is independent of etching depth, but the band for the minor profile shifts toward the longer wave numbers with increasing etching period until the damage layer is completely etched out. The depth of the damage layer is determined by the profiles of the shoulder and the second band and confirmed by the band shift of the minor profile. Transmission electron microscopy (TEM) further verified the results with respect to the depth of the damage layer. TEM observation showed that dislocations and stacking faults are responsible for the subsurface damage.

scholarly journals Mechanical properties of silicon in subsurface damage layer from nano-grinding studied by atomistic simulation

AIP Advances ◽  
2018 ◽  
Vol 8 (5) ◽  
pp. 055223 ◽  
Author(s):  
Zhiwei Zhang ◽  
Pei Chen ◽  
Fei Qin ◽  
Tong An ◽  
Huiping Yu
Keyword(s):  
Mechanical Properties ◽  
Atomistic Simulation ◽  
Subsurface Damage ◽  
Damage Layer

Optimum inductively coupled plasma etching of fused silica to remove subsurface damage layer

2015 ◽  
Vol 355 ◽  
pp. 1180-1185 ◽  
Author(s):  
Xiaolong Jiang ◽  
Ying Liu ◽  
Zhengkun Liu ◽  
Keqiang Qiu ◽  
Xiangdong Xu ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Fused Silica ◽  
Subsurface Damage ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled ◽  
Damage Layer
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