Resistive switching memory effects in p-type hydrogen-treated CuO nanowire

2020 ◽  
Vol 117 (4) ◽  
pp. 043502
Author(s):  
Chi-Hsin Huang ◽  
Yalun Tang ◽  
Kosuke Matsuzaki ◽  
Kenji Nomura
Keyword(s):  
Resistive Switching ◽  
Memory Effects ◽  
Resistive Switching Memory ◽  
Cuo Nanowire ◽  
P Type ◽  
Switching Memory

Spatial Nonuniformity in Resistive-Switching Memory Effects of NiO

2011 ◽  
Vol 133 (32) ◽  
pp. 12482-12485 ◽  
Author(s):  
Keisuke Oka ◽  
Takeshi Yanagida ◽  
Kazuki Nagashima ◽  
Masaki Kanai ◽  
Tomoji Kawai ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Effects ◽  
Resistive Switching Memory ◽  
Spatial Nonuniformity ◽  
Switching Memory

Space charge polarization-induced symmetrical negative resistive switching in individual p-type GeSe2:Bi superstructure nanobelts for non-volatile memory

2015 ◽  
Vol 3 (20) ◽  
pp. 5207-5213 ◽  
Author(s):  
Minghui Cao ◽  
Baochang Cheng ◽  
Li Xiao ◽  
Jie Zhao ◽  
Xiaohui Su ◽  
...  
Keyword(s):  
Space Charge ◽  
Resistive Switching ◽  
Polarization Effect ◽  
Space Charge Polarization ◽  
Resistive Switching Memory ◽  
Charge Polarization ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
P Type ◽  
Switching Memory

Two-terminal devices based on p-type GeSe2:Bi nanobelts show excellent symmetrical nonvolatile negative resistive switching memory behavior, originating from trap-induced space charge polarization effect.

scholarly journals Quantum conductors formation and resistive switching memory effects in zirconia nanotubes

2021 ◽  
Author(s):  
Alexander Vokhmintsev ◽  
Ilya Petrenyov ◽  
Robert Kamalov ◽  
Ilya Weinstein
Keyword(s):  
Resistive Switching ◽  
Memory Effects ◽  
Resistive Switching Memory ◽  
Switching Memory

Resistive switching memory effects in chalcogenide semiconductor ZnGa2Se4 thin films

2019 ◽  
Vol 36 (1) ◽  
pp. 100-105 ◽  
Author(s):  
Vishal Dhamecha ◽  
Basumati Patel ◽  
Dhananjay Dhruv ◽  
Andrzej Nowicki
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Memory Effects ◽  
Chalcogenide Semiconductor ◽  
Resistive Switching Memory ◽  
Switching Memory

Nanoscale Cross-Point Resistive Switching Memory Comprising p-Type SnO Bilayers

2015 ◽  
Vol 1 (3) ◽  
pp. 1400035 ◽  
Author(s):  
Mrinal K. Hota ◽  
Mohamed N. Hedhili ◽  
Qingxiao Wang ◽  
Vasily A. Melnikov ◽  
Omar F. Mohammed ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Cross Point ◽  
Resistive Switching Memory ◽  
P Type ◽  
Switching Memory

Resistive-Switching Memory Effects of NiO Nanowire/Metal Junctions

2010 ◽  
Vol 132 (19) ◽  
pp. 6634-6635 ◽  
Author(s):  
Keisuke Oka ◽  
Takeshi Yanagida ◽  
Kazuki Nagashima ◽  
Tomoji Kawai ◽  
Jin-Soo Kim ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Effects ◽  
Resistive Switching Memory ◽  
Switching Memory

scholarly journals Electroforming-free resistive switching memory effect in transparent p-type tin monoxide

2014 ◽  
Vol 104 (15) ◽  
pp. 152104 ◽  
Author(s):  
M. K. Hota ◽  
J. A. Caraveo-Frescas ◽  
M. A. McLachlan ◽  
H. N. Alshareef
Keyword(s):  
Memory Effect ◽  
Resistive Switching ◽  
Resistive Switching Memory ◽  
P Type ◽  
Tin Monoxide ◽  
Switching Memory

Chemical linkage functions of poly(ether imide)s on the resistive switching memory effects

2015 ◽  
Vol 16 ◽  
pp. 148-163 ◽  
Author(s):  
Kun-Li Wang ◽  
I-Hao Shih ◽  
Sheng-Tung Huang ◽  
Hsin-Luen Tsai
Keyword(s):  
Resistive Switching ◽  
Memory Effects ◽  
Resistive Switching Memory ◽  
Chemical Linkage ◽  
Switching Memory
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