Nanoscale Cross-Point Resistive Switching Memory Comprising p-Type SnO Bilayers

2015 ◽  
Vol 1 (3) ◽  
pp. 1400035 ◽  
Author(s):  
Mrinal K. Hota ◽  
Mohamed N. Hedhili ◽  
Qingxiao Wang ◽  
Vasily A. Melnikov ◽  
Omar F. Mohammed ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Cross Point ◽  
Resistive Switching Memory ◽  
P Type ◽  
Switching Memory

Novel cross-point resistive switching memory with self-formed schottky barrier

2010 ◽  
Author(s):  
Minseok Jo ◽  
Dong-jun Seong ◽  
Seonghyun Kim ◽  
Joonmyoung Lee ◽  
Wootae Lee ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Resistive Switching ◽  
Cross Point ◽  
Resistive Switching Memory ◽  
Switching Memory

Resistive switching memory effects in p-type hydrogen-treated CuO nanowire

2020 ◽  
Vol 117 (4) ◽  
pp. 043502
Author(s):  
Chi-Hsin Huang ◽  
Yalun Tang ◽  
Kosuke Matsuzaki ◽  
Kenji Nomura
Keyword(s):  
Resistive Switching ◽  
Memory Effects ◽  
Resistive Switching Memory ◽  
Cuo Nanowire ◽  
P Type ◽  
Switching Memory

Space charge polarization-induced symmetrical negative resistive switching in individual p-type GeSe2:Bi superstructure nanobelts for non-volatile memory

2015 ◽  
Vol 3 (20) ◽  
pp. 5207-5213 ◽  
Author(s):  
Minghui Cao ◽  
Baochang Cheng ◽  
Li Xiao ◽  
Jie Zhao ◽  
Xiaohui Su ◽  
...  
Keyword(s):  
Space Charge ◽  
Resistive Switching ◽  
Polarization Effect ◽  
Space Charge Polarization ◽  
Resistive Switching Memory ◽  
Charge Polarization ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
P Type ◽  
Switching Memory

Two-terminal devices based on p-type GeSe2:Bi nanobelts show excellent symmetrical nonvolatile negative resistive switching memory behavior, originating from trap-induced space charge polarization effect.

3-D Cross-Point Array Operation on ${\rm AlO}_{y}/{\rm HfO}_{x}$ -Based Vertical Resistive Switching Memory

2014 ◽  
Vol 61 (5) ◽  
pp. 1377-1381 ◽  
Author(s):  
Bin Gao ◽  
Bing Chen ◽  
Rui Liu ◽  
Feifei Zhang ◽  
Peng Huang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Cross Point ◽  
Resistive Switching Memory ◽  
Switching Memory

Scalable cross-point resistive switching memory and mechanism through an understanding of H2O2/glucose sensing using an IrOx/Al2O3/W structure

2017 ◽  
Vol 19 (38) ◽  
pp. 25938-25948 ◽  
Author(s):  
Somsubhra Chakrabarti ◽  
Siddheswar Maikap ◽  
Subhranu Samanta ◽  
Surajit Jana ◽  
Anisha Roy ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Glucose Sensing ◽  
Glucose Detection ◽  
Cross Point ◽  
Resistive Switching Memory ◽  
Switching Characteristics ◽  
First Time ◽  
Switching Memory

The resistive switching characteristics of a scalable IrOx/Al2O3/W cross-point structure and its mechanism for pH/H2O2 sensing along with glucose detection have been investigated for the first time.

Sign in / Sign up

Export Citation Format

Share Document