scholarly journals Electroforming-free resistive switching memory effect in transparent p-type tin monoxide

2014 ◽  
Vol 104 (15) ◽  
pp. 152104 ◽  
Author(s):  
M. K. Hota ◽  
J. A. Caraveo-Frescas ◽  
M. A. McLachlan ◽  
H. N. Alshareef
Keyword(s):  
Memory Effect ◽  
Resistive Switching ◽  
Resistive Switching Memory ◽  
P Type ◽  
Tin Monoxide ◽  
Switching Memory

Resistive-Switching Memory Effect of Hybrid Structures with Polyimide and Sno2 Nanocrystals

2012 ◽  
Vol 12 (7) ◽  
pp. 5449-5452 ◽  
Author(s):  
Dong Uk Lee ◽  
Seon Pil Kim ◽  
Eun Kyu Kim ◽  
Won-Ju Cho ◽  
Young-Ho Kim ◽  
...  
Keyword(s):  
Memory Effect ◽  
Resistive Switching ◽  
Hybrid Structures ◽  
Resistive Switching Memory ◽  
Sno2 Nanocrystals ◽  
Switching Memory

Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites

2017 ◽  
Vol 5 (37) ◽  
pp. 9799-9805 ◽  
Author(s):  
Guilin Chen ◽  
Peng Zhang ◽  
Lulu Pan ◽  
Lin Qi ◽  
Fucheng Yu ◽  
...  
Keyword(s):  
Memory Effect ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Resistive Switching Memory ◽  
Switching Memory

A non-volatile resistive switching memory effect was observed in flexible memory device based on SrTiO3 nanosheets and polyvinylpyrrolidone composites.

Resistive switching memory effect of ZrO[sub 2] films with Zr[sup +] implanted

2008 ◽  
Vol 92 (1) ◽  
pp. 012117 ◽  
Author(s):  
Qi Liu ◽  
Weihua Guan ◽  
Shibing Long ◽  
Rui Jia ◽  
Ming Liu ◽  
...  
Keyword(s):  
Memory Effect ◽  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Memory

Resistive switching memory effects in p-type hydrogen-treated CuO nanowire

2020 ◽  
Vol 117 (4) ◽  
pp. 043502
Author(s):  
Chi-Hsin Huang ◽  
Yalun Tang ◽  
Kosuke Matsuzaki ◽  
Kenji Nomura
Keyword(s):  
Resistive Switching ◽  
Memory Effects ◽  
Resistive Switching Memory ◽  
Cuo Nanowire ◽  
P Type ◽  
Switching Memory

Space charge polarization-induced symmetrical negative resistive switching in individual p-type GeSe2:Bi superstructure nanobelts for non-volatile memory

2015 ◽  
Vol 3 (20) ◽  
pp. 5207-5213 ◽  
Author(s):  
Minghui Cao ◽  
Baochang Cheng ◽  
Li Xiao ◽  
Jie Zhao ◽  
Xiaohui Su ◽  
...  
Keyword(s):  
Space Charge ◽  
Resistive Switching ◽  
Polarization Effect ◽  
Space Charge Polarization ◽  
Resistive Switching Memory ◽  
Charge Polarization ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
P Type ◽  
Switching Memory

Two-terminal devices based on p-type GeSe2:Bi nanobelts show excellent symmetrical nonvolatile negative resistive switching memory behavior, originating from trap-induced space charge polarization effect.

Nanoscale Cross-Point Resistive Switching Memory Comprising p-Type SnO Bilayers

2015 ◽  
Vol 1 (3) ◽  
pp. 1400035 ◽  
Author(s):  
Mrinal K. Hota ◽  
Mohamed N. Hedhili ◽  
Qingxiao Wang ◽  
Vasily A. Melnikov ◽  
Omar F. Mohammed ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Cross Point ◽  
Resistive Switching Memory ◽  
P Type ◽  
Switching Memory
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