Space charge polarization-induced symmetrical negative resistive switching in individual p-type GeSe2:Bi superstructure nanobelts for non-volatile memory

2015 ◽  
Vol 3 (20) ◽  
pp. 5207-5213 ◽  
Author(s):  
Minghui Cao ◽  
Baochang Cheng ◽  
Li Xiao ◽  
Jie Zhao ◽  
Xiaohui Su ◽  
...  
Keyword(s):  
Space Charge ◽  
Resistive Switching ◽  
Polarization Effect ◽  
Space Charge Polarization ◽  
Resistive Switching Memory ◽  
Charge Polarization ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
P Type ◽  
Switching Memory

Two-terminal devices based on p-type GeSe2:Bi nanobelts show excellent symmetrical nonvolatile negative resistive switching memory behavior, originating from trap-induced space charge polarization effect.

Human hair keratin for physically transient resistive switching memory devices

2019 ◽  
Vol 7 (11) ◽  
pp. 3315-3321 ◽  
Author(s):  
Qiqi Lin ◽  
Shilei Hao ◽  
Wei Hu ◽  
Ming Wang ◽  
Zhigang Zang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Human Hair ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Switching Performance ◽  
Hair Keratin ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Memory

A physically transient non-volatile memory device made of keratin exhibits great resistive switching performance.

A persistently increasing resistance ratio and repeatable non-volatile memory in AZO/CZTSe/FTO resistive switching devices

2018 ◽  
Vol 11 (02) ◽  
pp. 1850023 ◽  
Author(s):  
Pingping Zheng ◽  
Xuejiao Zhang ◽  
Bai Sun ◽  
Shuangsuo Mao ◽  
Shouhui Zhu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Sandwich Structure ◽  
Resistance Ratio ◽  
Resistive Switching Memory ◽  
Non Volatile Memory ◽  
Doped Zno ◽  
Volatile Memory ◽  
Memory Applications ◽  
First Time ◽  
Switching Memory

In this paper, the Cu2ZnSnSe4 (CZTSe) film was deposited on the fluorine-doped SnO2 (FTO), and Al-doped ZnO (AZO) and FTO act as top and bottom electrodes for constructing a sandwich structure, in which the AZO/CZTSe/FTO device not only represents outstanding non-volatile resistive switching memory behavior, but also shows a persistently increasing resistance ratio phenomenon for the first time. This work reveals that the device based on CZTSe film holds an excellent memory effect for non-volatile memory applications in the electronic equipment.

Resistive switching behaviour in a polymannose film for multistate non-volatile memory application

2021 ◽  
Author(s):  
Ilias A. Tayeb ◽  
Feng Zhao ◽  
Jafri M. Abdullah ◽  
Kuan Y. Cheong
Keyword(s):  
Environmental Impacts ◽  
Resistive Switching ◽  
Organic Materials ◽  
Electronic Waste ◽  
Resistive Switching Memory ◽  
Switching Behaviour ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Memory

With the shift towards reducing electronic waste, bio-organic materials are considered as prominent alternatives to produce resistive switching memory due to their biodegradability and benign environmental impacts.

Resistive switching memory effects in p-type hydrogen-treated CuO nanowire

2020 ◽  
Vol 117 (4) ◽  
pp. 043502
Author(s):  
Chi-Hsin Huang ◽  
Yalun Tang ◽  
Kosuke Matsuzaki ◽  
Kenji Nomura
Keyword(s):  
Resistive Switching ◽  
Memory Effects ◽  
Resistive Switching Memory ◽  
Cuo Nanowire ◽  
P Type ◽  
Switching Memory

Nanoscale Cross-Point Resistive Switching Memory Comprising p-Type SnO Bilayers

2015 ◽  
Vol 1 (3) ◽  
pp. 1400035 ◽  
Author(s):  
Mrinal K. Hota ◽  
Mohamed N. Hedhili ◽  
Qingxiao Wang ◽  
Vasily A. Melnikov ◽  
Omar F. Mohammed ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Cross Point ◽  
Resistive Switching Memory ◽  
P Type ◽  
Switching Memory

scholarly journals Electroforming-free resistive switching memory effect in transparent p-type tin monoxide

2014 ◽  
Vol 104 (15) ◽  
pp. 152104 ◽  
Author(s):  
M. K. Hota ◽  
J. A. Caraveo-Frescas ◽  
M. A. McLachlan ◽  
H. N. Alshareef
Keyword(s):  
Memory Effect ◽  
Resistive Switching ◽  
Resistive Switching Memory ◽  
P Type ◽  
Tin Monoxide ◽  
Switching Memory
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