scholarly journals Impact of deposition of indium tin oxide double layers on hydrogenated amorphous silicon/crystalline silicon heterojunction

AIP Advances ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 065008
Author(s):  
Masanori Semma ◽  
Kazuhiro Gotoh ◽  
Markus Wilde ◽  
Shohei Ogura ◽  
Yasuyoshi Kurokawa ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Double Layers ◽  
Hydrogenated Amorphous

Semitransparent Silicide Electrode Formed on the Surface of a-Si:H

1984 ◽  
Vol 33 ◽  
Author(s):  
T. Tsukada ◽  
K. Seki ◽  
H. Yamamoto ◽  
A. Sasano
Keyword(s):  
Amorphous Silicon ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Metal Layer ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Layer ◽  
Transparent Electrode ◽  
Optical And Electrical Properties ◽  
Silicide Layer ◽  
Hydrogenated Amorphous

ABSTRACTThin silicide layers are found to be formed through solid state reaction between hydrogenated amorphous silicon(a-Si:H) and metals. The method of formation of the silicide layer is very simple: deposition of metal on top of amorphous silicon layer and annealing and etching of the residual metal layer. The reaction kinetics and properties of this layer are described. The thickness of this silicide layer is estimated to be 5 nm. Accordingly, it can be used as a transparent electrode in a-Si:H photodiodes. Photodiodes using this semitransparent electrode have as good optical and electrical properties as conventional a-Si:H photodiodes using ITO(indium tin oxide). Schottky barrier characteristics are also de-scribed.

scholarly journals High quality crystalline silicon surface passivation by combined intrinsic and n-type hydrogenated amorphous silicon

2011 ◽  
Vol 99 (20) ◽  
pp. 203503 ◽  
Author(s):  
Jan-Willem A. Schüttauf ◽  
Karine H. M. van der Werf ◽  
Inge M. Kielen ◽  
Wilfried G. J. H. M. van Sark ◽  
Jatindra K. Rath ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Surface ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
High Quality ◽  
Hydrogenated Amorphous ◽  
Silicon Surface Passivation

Investigation of the Causes and Variation of Leakage Currents in Amorphous Silicon P-I-N Diodes

2003 ◽  
Vol 762 ◽  
Author(s):  
Todd R. Johnson ◽  
Gautam Ganguly ◽  
George S. Wood ◽  
David E. Carlson
Keyword(s):  
Zinc Oxide ◽  
Amorphous Silicon ◽  
Point Defects ◽  
Tin Oxide ◽  
Reverse Bias ◽  
Hydrogenated Amorphous Silicon ◽  
Cell Area ◽  
Leakage Currents ◽  
Single Junction ◽  
Hydrogenated Amorphous

AbstractExcess leakage currents under reverse bias (known as shunting) and spontaneous reductions of this excess leakage under increased reverse bias (known as curing) were investigated in hydrogenated amorphous silicon (a-Si:H) based single junction p-i-n type diodes. An increase in the frequency of shunting was observed when the front contacts were switched from tin oxide to zinc oxide, most likely due to defects in the previously deposited zinc oxide coated glass was observed. Storage in the dark and light soaking up to 100 hours were both observed to independently increase the leakage current in previously leaking diodes. Models for the distribution of shunt-causing defects within a given cell area were considered. Comparing the measured frequency of shunting using cells of varying area (1 to 16 mm2) to the models' predictions indicate a distribution of point defects separated by relatively large average distances that are slightly larger for tin oxide (5-6 mm) than for zinc oxide (4 mm).

Hall-Effect and Sign Properties in Hydrogenated Amorphous and Disordered Crystalline Silicon

1996 ◽  
Vol 420 ◽  
Author(s):  
C. E. Nebel ◽  
M. Rother ◽  
C. Summonte ◽  
M. Heintze ◽  
M. Stutzmann
Keyword(s):  
Hall Effect ◽  
Amorphous Silicon ◽  
Volume Fraction ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Small Volume Fraction ◽  
Phosphorus Doped ◽  
Hydrogenated Amorphous ◽  
Defect Densities ◽  
Very High

AbstractHall experiments on a series of microcrystalline, microcrystalline-amorphous, amorphous and crystalline silicon samples with varying defect densities are presented and discussed. Normal Hall effect signatures on boron and phosphorus doped hydrogenated amorphous silicon are detected. We interpret these results to be due to a small volume fraction of nanocrystalline Si, which falls below the detection limits of Raman experiments. Hydrogenated amorphous silicon, prepared under conditions far away from microcrystalline growth, shows the known double sign anomaly, Sign reversals in c-Si, where the disorder is increased by Si implantation up to very high levels, could not be detected.

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