Energy distribution of gap states in hydrogenated amorphous silicon by post-transit photocurrent spectroscopy: Validity of an indium-tin oxide/silicon oxide double-layer gate

2005 ◽  
Vol 97 (10) ◽  
pp. 103707 ◽  
Author(s):  
I. Sakata ◽  
M. Yamanaka
1984 ◽  
Vol 33 ◽  
Author(s):  
T. Tsukada ◽  
K. Seki ◽  
H. Yamamoto ◽  
A. Sasano

ABSTRACTThin silicide layers are found to be formed through solid state reaction between hydrogenated amorphous silicon(a-Si:H) and metals. The method of formation of the silicide layer is very simple: deposition of metal on top of amorphous silicon layer and annealing and etching of the residual metal layer. The reaction kinetics and properties of this layer are described. The thickness of this silicide layer is estimated to be 5 nm. Accordingly, it can be used as a transparent electrode in a-Si:H photodiodes. Photodiodes using this semitransparent electrode have as good optical and electrical properties as conventional a-Si:H photodiodes using ITO(indium tin oxide). Schottky barrier characteristics are also de-scribed.


AIP Advances ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 065008
Author(s):  
Masanori Semma ◽  
Kazuhiro Gotoh ◽  
Markus Wilde ◽  
Shohei Ogura ◽  
Yasuyoshi Kurokawa ◽  
...  

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