Energy distribution of gap states in hydrogenated amorphous silicon by post-transit photocurrent spectroscopy: Validity of an indium-tin oxide/silicon oxide double-layer gate
2014 ◽
Vol 129
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pp. 70-81
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2015 ◽
Vol 127
(3)
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pp. 767-769
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2012 ◽
Vol 358
(17)
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pp. 2035-2038
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1984 ◽
Vol 50
(11)
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pp. 991-994
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