High mobility large area single crystal III–V thin film templates directly grown on amorphous SiO2 on silicon

2020 ◽  
Vol 117 (4) ◽  
pp. 042103 ◽  
Author(s):  
Jun Tao ◽  
Debarghya Sarkar ◽  
Sizhe Weng ◽  
Thomas Orvis ◽  
Ragib Ahsan ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
High Mobility ◽  
Large Area ◽  
Amorphous Sio2

scholarly journals Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yuki Tsuruma ◽  
Emi Kawashima ◽  
Yoshikazu Nagasaki ◽  
Takashi Sekiya ◽  
Gaku Imamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Flexible Substrate ◽  
Single Crystal Silicon ◽  
Bulk Single Crystal ◽  
Next Generation ◽  
Power Devices ◽  
Large Area ◽  
Crystal Silicon ◽  
Amorphous Thin Film

AbstractPower devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (> 1000 °C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer, thereby preventing their applications to compact devices, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (< 1 × 10–4 Ω cm2) and high breakdown voltage VBD (~ 100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.

scholarly journals Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit

2021 ◽  
Author(s):  
Yuki Tsuruma ◽  
Emi Kawashima ◽  
Yoshikazu Nagasaki ◽  
Takashi Sekiya ◽  
Gaku Imamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Flexible Substrate ◽  
Single Crystal Silicon ◽  
Bulk Single Crystal ◽  
Next Generation ◽  
Power Devices ◽  
Large Area ◽  
Crystal Silicon ◽  
Amorphous Thin Film

Abstract Power devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (>1000°C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer1, thereby preventing their applications to compact devices2, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon3). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (<1×10-4 Ωcm2) and high breakdown voltage VBD (~100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.

In-plane isotropic charge transport characteristics of single-crystal FETs with high mobility based on 2,6-bis(4-methoxyphenyl)anthracene: experimental cum theoretical assessment

2017 ◽  
Vol 5 (2) ◽  
pp. 370-375 ◽  
Author(s):  
Aiyuan Li ◽  
Lijia Yan ◽  
Chao He ◽  
Yanan Zhu ◽  
Dongwei Zhang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Charge Transport ◽  
High Mobility ◽  
Large Area ◽  
Theoretical Assessment

In-plane isotropic charge transport single crystal FET with mobility exceeding 15 cm2V−1s−1is obtained, the result is desirable in large-area single-crystal FET arrays.

Thermally Processed High-Mobility MOS Thin-Film Transistors on Transferable Single-Crystal Elastically Strain-Sharing Si/SiGe/Si Nanomembranes

2008 ◽  
Vol 55 (3) ◽  
pp. 810-815 ◽  
Author(s):  
Hao-Chih Yuan ◽  
M.M. Kelly ◽  
D.E. Savage ◽  
M.G. Lagally ◽  
G.K. Celler ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Thermally Processed

HIGH MOBILITY CONJUGATED POLYMER SEMICONDUCTORS FOR ORGANIC THIN FILM TRANSISTORS

COSMOS ◽  
2009 ◽  
Vol 05 (01) ◽  
pp. 59-77
Author(s):  
YUNING LI ◽  
BENG S. ONG
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
High Mobility ◽  
Cost Effective ◽  
Charge Carrier Mobility ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Large Area ◽  
Polymer Semiconductors

Organic thin film transistors (OTFTs) are promising candidates as alternatives to silicon TFTs for applications where light weight, large area and flexibility are required. OTFTs have shown potential for cost effective fabrication using solution deposition techniques under mild conditions. However, two major issues must be addressed prior to the commercialization of OTFT-based electronics: (i) low charge mobilities and (ii) insufficient air stability. This article reviews recent progress in the design and development of thiophene-based polymer semiconductors as channel materials for OTFTs. To date, both high performance p-type and n-type thiophene-based polymers with benchmark charge carrier mobility of > 0.5 cm2 V-1 s-1 have been archived, which bring printed OTFTs one step closer to commercialization.

High Performance Thin Film Transistor with ZnO Channel Layer Deposited by DC Magnetron Sputtering

2008 ◽  
Vol 8 (9) ◽  
pp. 4557-4560 ◽  
Author(s):  
Yeon-Keon Moon ◽  
Dae-Yong Moon ◽  
Sang-Ho Lee ◽  
Chang-Oh Jeong ◽  
Jong-Wan Park
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Low Voltage ◽  
Chemical Properties ◽  
High Mobility ◽  
Zno Thin Films ◽  
Dc Magnetron Sputtering ◽  
Large Area ◽  
Channel Layer

Research in large area electronics,1 especially for low-temperature plastic substrates, focuses commonly on limitations of the semiconductor in thin film transistors (TFTs), in particular its low mobility. ZnO is an emerging example of a semiconductor material for TFTs that can have high mobility, while a-Si and organic semiconductors have low mobility (<1 cm2/Vs).2–5 ZnO-based TFTs have achieved high mobility, along with low-voltage operation low off-state current, and low gate leakage current. In general, ZnO thin films for the channel layer of TFTs are deposited with RF magnetron sputtering methods. On the other hand, we studied ZnO thin films deposited with DC magnetron sputtering for the channel layer of TFTs. After analyzing the basic physical and chemical properties of ZnO thin films, we fabricated a TFT-unit cell using ZnO thin films for the channel layer. The field effect mobility (μsat) of 1.8 cm2/Vs and threshold voltage (Vth) of −0.7 V were obtained.

Properties of Single-Crystal Silicon Films on Amorphous SiO2 on Single-Crystal Cubic Zirconia Substrates

1985 ◽  
Vol 48 ◽  
Author(s):  
I. Golecki ◽  
R. L. Maddox ◽  
H. L. Glass ◽  
A. L. Lin ◽  
H. M. Manasevit
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon On Insulator ◽  
Back Side ◽  
X Ray Diffraction ◽  
Large Area ◽  
Crystal Silicon ◽  
Amorphous Sio2 ◽  
Cubic Zirconia ◽  
Si Films

ABSTRACTA new approach to achieving a large-area silicon-on-insulator technology without pre-patterning is described. (100) Si films are first grown epitaxially on (100) yttria-stabilized cubic zirconia (YSZ) substrates by the pyrolysis of SiH4. The Si side of the <Si>/<YSZ>interface is then oxidized in pyrogenic steam (at 925 °C) or dry oxygen (at 1100°C) to form the structure <Si>/amorphous SiO2/<YSZ>. The oxidation occurs by the rapid diffusion of oxidants through the 0.42 mm thick YSZ substrate; e.g., a 0.3 μm SiO2 layer is obtained in 6 h in steam. The samples are analyzed by Rutherford backscattering and channeling spectrometry, X-ray diffraction, infra-red reflectance, Auger electron spectroscopy and sheet resistance measurements. In addition to forming the preferred Si/SiO2 interface, the back-side oxidation eliminates the most defective part of the Si film.

Organic field-effect transistors based on tetrathiafulvalene derivatives

2008 ◽  
Vol 80 (11) ◽  
pp. 2405-2423 ◽  
Author(s):  
Xike Gao ◽  
Wenfeng Qiu ◽  
Yunqi Liu ◽  
Gui Yu ◽  
Daoben Zhu
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Device Fabrication ◽  
Organic Field Effect Transistors ◽  
Large Area ◽  
Solution Processed

In recent years, tetrathiafulvalene (TTF) and its derivatives have been used as semiconducting materials for organic field-effect transistors (OFETs). In this review, we summarize the recent progress in the field of TTF-based OFETs. We introduce the structure and operation of OFETs, and focus on TTF derivatives used in OFETs. TTF derivatives used in OFETs can be divided into three parts by the semiconductor's morphology and the device fabrication technique: (1) TTF derivatives used for single-crystal OFETs, (2) TTF derivatives used for vacuum-deposited thin-film OFETs, and (3) TTF derivatives used for solution-processed thin-film OFETs. The single-crystal OFETs based on TTF derivatives were fabricated by drop-casting method and showed high performance, with the mobility up to 1.4 cm2/Vs. The vacuum-deposited thin-film OFETs based on TTF derivatives were well developed, some of which have shown high performance comparable to that of amorphous silicon, with good air-stability. Although the mobilities of most solution-processed OFETs based on TTF derivatives are limited at 10-2 cm2/Vs, the study on solution-processable TTF derivatives and their devices are promising, because of their low-cost, large-area-coverage virtues. The use of organic charge-transfer (OCT) compounds containing TTF or its derivatives in OFETs is also included in this review.

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