In-plane isotropic charge transport characteristics of single-crystal FETs with high mobility based on 2,6-bis(4-methoxyphenyl)anthracene: experimental cum theoretical assessment

2017 ◽  
Vol 5 (2) ◽  
pp. 370-375 ◽  
Author(s):  
Aiyuan Li ◽  
Lijia Yan ◽  
Chao He ◽  
Yanan Zhu ◽  
Dongwei Zhang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Charge Transport ◽  
High Mobility ◽  
Large Area ◽  
Theoretical Assessment

In-plane isotropic charge transport single crystal FET with mobility exceeding 15 cm2V−1s−1is obtained, the result is desirable in large-area single-crystal FET arrays.

High mobility large area single crystal III–V thin film templates directly grown on amorphous SiO2 on silicon

2020 ◽  
Vol 117 (4) ◽  
pp. 042103 ◽  
Author(s):  
Jun Tao ◽  
Debarghya Sarkar ◽  
Sizhe Weng ◽  
Thomas Orvis ◽  
Ragib Ahsan ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
High Mobility ◽  
Large Area ◽  
Amorphous Sio2

Enhanced ambipolar charge transport for efficient organic single crystal light-emitting transistors with a narrowed ambipolar regime

2020 ◽  
Vol 8 (46) ◽  
pp. 16333-16338
Author(s):  
Ke Zhou ◽  
Jie Liu ◽  
Huanli Dong ◽  
Shang Ding ◽  
Yonggang Zhen ◽  
...  
Keyword(s):  
Energy Level ◽  
Single Crystal ◽  
Charge Transport ◽  
Light Emission ◽  
High Mobility ◽  
Strong Light ◽  
Light Emitting ◽  
Organic Single Crystal ◽  
Light Emitting Transistors

An efficient ambipolar OLET was constructed based on a high-mobility emissive 2,6-diphenylanthracene semiconductor via energy-level engineering, giving a narrowed ambipolar regime with strong light emission.

Charge transport in high mobility single crystal diamond

2008 ◽  
Vol 17 (7-10) ◽  
pp. 1235-1240 ◽  
Author(s):  
Miloš Nesladek ◽  
Anna Bogdan ◽  
Wim Deferme ◽  
Nicolas Tranchant ◽  
Philippe Bergonzo
Keyword(s):  
Single Crystal ◽  
Charge Transport ◽  
High Mobility ◽  
Single Crystal Diamond

High-mobility air-stable n-type field-effect transistors based on large-area solution-processed organic single-crystal arrays

Nano Research ◽  
2017 ◽  
Vol 11 (2) ◽  
pp. 882-891 ◽  
Author(s):  
Liang Wang ◽  
Xiujuan Zhang ◽  
Gaole Dai ◽  
Wei Deng ◽  
Jiansheng Jie ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Large Area ◽  
Solution Processed ◽  
Organic Single Crystal

Wide-bandgap organic nanocrystals with high mobility and tunable lasing emission

2021 ◽  
Author(s):  
Yin-Xiang Li ◽  
Wei Liu ◽  
Meng-Na Yu ◽  
Xue-Mei Dong ◽  
Chang-Jin Ou ◽  
...  
Keyword(s):  
Charge Transport ◽  
High Mobility ◽  
Wide Bandgap ◽  
Strong Emission ◽  
Organic Nanocrystals ◽  
Dual Color ◽  
Efficient Charge

Wide-bandgap organic nanocrystals are developed. The strong emission, efficient charge transport and tunable dual-color lasing characters indicate their superior photoelectric integrated property toward potential multifunctional applications.

scholarly journals Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yuki Tsuruma ◽  
Emi Kawashima ◽  
Yoshikazu Nagasaki ◽  
Takashi Sekiya ◽  
Gaku Imamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Flexible Substrate ◽  
Single Crystal Silicon ◽  
Bulk Single Crystal ◽  
Next Generation ◽  
Power Devices ◽  
Large Area ◽  
Crystal Silicon ◽  
Amorphous Thin Film

AbstractPower devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (> 1000 °C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer, thereby preventing their applications to compact devices, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (< 1 × 10–4 Ω cm2) and high breakdown voltage VBD (~ 100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.

scholarly journals All-Organic, Low Voltage, Transparent and Compliant Organic Field-Effect Transistor Fabricated by Means of Large-Area, Cost-Effective Techniques

2020 ◽  
Vol 10 (19) ◽  
pp. 6656
Author(s):  
Stefano Lai ◽  
Giulia Casula ◽  
Pier Carlo Ricci ◽  
Piero Cosseddu ◽  
Annalisa Bonfiglio
Keyword(s):  
Field Effect ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Chemical Vapor ◽  
Cost Effective ◽  
Large Area ◽  
Parylene C ◽  
Biomedical Sensing ◽  
Novel Applications

The development of electronic devices with enhanced properties of transparency and conformability is of high interest for the development of novel applications in the field of bioelectronics and biomedical sensing. Here, a fabrication process for all organic Organic Field-Effect Transistors (OFETs) by means of large-area, cost-effective techniques such as inkjet printing and chemical vapor deposition is reported. The fabricated device can operate at low voltages (as high as 4 V) with ideal electronic characteristics, including low threshold voltage, relatively high mobility and low subthreshold voltages. The employment of organic materials such as Parylene C, PEDOT:PSS and 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS pentacene) helps to obtain highly transparent transistors, with a relative transmittance exceeding 80%. Interestingly enough, the proposed process can be reliably employed for OFET fabrication over different kind of substrates, ranging from transparent, flexible but relatively thick polyethylene terephthalate (PET) substrates to transparent, 700-nm-thick, compliant Parylene C films. OFETs fabricated on such sub-micrometrical substrates maintain their functionality after being transferred onto complex surfaces, such as human skin and wearable items. To this aim, the electrical and electromechanical stability of proposed devices will be discussed.

An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm2 V−1 s−1

2016 ◽  
Vol 52 (11) ◽  
pp. 2370-2373 ◽  
Author(s):  
Jian Deng ◽  
Yuanxiang Xu ◽  
Liqun Liu ◽  
Cunfang Feng ◽  
Jia Tang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Active Materials ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

Ambipolar OFETs based on AIE-active materials were demonstrated to have a high and balanced mobility level of 2.0 cm2 V−1 s−1.

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