Threshold voltage drift of InPn‐channel enhancement mode metal‐insulator‐semiconductor field‐effect transistors

J. G. Johnson; S. R. Forrest; C. R. Zeisse; R. Nguyen

doi:10.1063/1.99423

Threshold voltage drift of InPn‐channel enhancement mode metal‐insulator‐semiconductor field‐effect transistors

Applied Physics Letters ◽

10.1063/1.99423 ◽

1988 ◽

Vol 52 (6) ◽

pp. 495-497 ◽

Cited By ~ 5

Author(s):

J. G. Johnson ◽

S. R. Forrest ◽

C. R. Zeisse ◽

R. Nguyen

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

Voltage Drift

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Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment

Journal of Materials Chemistry C ◽

10.1039/c9tc02468a ◽

2019 ◽

Vol 7 (29) ◽

pp. 8855-8860 ◽

Cited By ~ 3

Author(s):

Janghyuk Kim ◽

Marko J. Tadjer ◽

Michael A. Mastro ◽

Jihyun Kim

Keyword(s):

Plasma Treatment ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

Mode Operation

The threshold voltage of β-Ga2O3 metal–insulator–semiconductor field-effect transistors is controlled via remote fluorine plasma treatment, enabling an enhancement-mode operation under double gate condition.

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Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V

Applied Physics Express ◽

10.7567/apex.8.036502 ◽

2015 ◽

Vol 8 (3) ◽

pp. 036502 ◽

Cited By ~ 6

Author(s):

Kean B. Lee ◽

Ivor Guiney ◽

Sheng Jiang ◽

Zaffar H. Zaidi ◽

Hongtu Qian ◽

...

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

Blocking Voltage ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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High‐Current‐Density Enhancement‐Mode Ultrawide‐Bandgap AlGaN Channel Metal–Insulator–Semiconductor Heterojunction Field‐Effect Transistors with a Threshold Voltage of 5 V

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.202000576 ◽

2021 ◽

pp. 2000576

Author(s):

Hao Xue ◽

Kamal Hussain ◽

Vishank Talesara ◽

Towhidur Razzak ◽

Mikhail Gaevski ◽

...

Keyword(s):

Current Density ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

High Current Density ◽

High Current ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

Density Enhancement

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High‐speed enhancement mode InP metal‐insulator‐semiconductor field‐effect transistors exhibiting very high transconductance

Applied Physics Letters ◽

10.1063/1.97105 ◽

1986 ◽

Vol 49 (9) ◽

pp. 513-515 ◽

Cited By ~ 9

Author(s):

A. Antreasyan ◽

P. A. Garbinski ◽

V. D. Mattera ◽

H. Temkin

Keyword(s):

Field Effect ◽

High Speed ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

High Transconductance ◽

Very High

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Electrical and optical characteristics of InP enhancement mode metal/insulator/semiconductor field effect transistors with a novel anodic double-layer gate insulator

Thin Solid Films ◽

10.1016/0040-6090(83)90429-7 ◽

1983 ◽

Vol 103 (1-3) ◽

pp. 107-117 ◽

Cited By ~ 7

Author(s):

T Sawada ◽

H Hasegawa ◽

H Ohno

Keyword(s):

Double Layer ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Insulator ◽

Optical Characteristics ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode

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Anomalous inversion channel formation in enhancement‐mode InP metal‐insulator‐semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.330003 ◽

1982 ◽

Vol 53 (10) ◽

pp. 7033-7038 ◽

Cited By ~ 5

Author(s):

Yukinobu Shinoda ◽

Takeshi Kobayashi

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Channel Formation ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

Inversion Channel

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Threshold voltage control of Pt-Ti-O gate Si-metal-insulator semiconductor field-effect transistors hydrogen gas sensors by using oxygen invasion into Ti layers

Journal of Applied Physics ◽

10.1063/1.3645028 ◽

2011 ◽

Vol 110 (7) ◽

pp. 074515 ◽

Cited By ~ 8

Author(s):

Toshiyuki Usagawa ◽

Yota Kikuchi

Keyword(s):

Gas Sensors ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Voltage Control ◽

Hydrogen Gas ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Hydrogen Gas Sensors

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Enhancement-Mode N-Polar GaN Metal–Insulator–Semiconductor Field Effect Transistors with Current Gain Cutoff Frequency of 120 GHz

Applied Physics Express ◽

10.1143/apex.4.024103 ◽

2011 ◽

Vol 4 (2) ◽

pp. 024103 ◽

Cited By ~ 10

Author(s):

Uttam Singisetti ◽

Man Hoi Wong ◽

Sansaptak Dasgupta ◽

James S. Speck ◽

Umesh K. Mishra

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Cutoff Frequency ◽

Current Gain ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode

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Enhancement mode InP metal‐insulator‐semiconductor field‐effect transistors grown by chemical beam epitaxy

Applied Physics Letters ◽

10.1063/1.97521 ◽

1986 ◽

Vol 49 (14) ◽

pp. 874-876 ◽

Cited By ~ 2

Author(s):

A. Antreasyan ◽

W. T. Tsang ◽

P. A. Garbinski

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Chemical Beam Epitaxy ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode

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Threshold-voltage control and enhancement-mode characteristics in multilayer tin disulfide field-effect transistors by gate-oxide passivation with an alkylphosphonic acid self-assembled monolayer

Journal of Applied Physics ◽

10.1063/1.4914488 ◽

2015 ◽

Vol 117 (10) ◽

pp. 104509 ◽

Cited By ~ 9

Author(s):

Ute Zschieschang ◽

Tanja Holzmann ◽

Alexander Kuhn ◽

Mahdieh Aghamohammadi ◽

Bettina V. Lotsch ◽

...

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Voltage Control ◽

Gate Oxide ◽

Self Assembled Monolayer ◽

Enhancement Mode ◽

Tin Disulfide ◽

Mode Characteristics ◽

Alkylphosphonic Acid

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