Threshold voltage control of Pt-Ti-O gate Si-metal-insulator semiconductor field-effect transistors hydrogen gas sensors by using oxygen invasion into Ti layers

Toshiyuki Usagawa; Yota Kikuchi

doi:10.1063/1.3645028

Threshold voltage control of Pt-Ti-O gate Si-metal-insulator semiconductor field-effect transistors hydrogen gas sensors by using oxygen invasion into Ti layers

Journal of Applied Physics ◽

10.1063/1.3645028 ◽

2011 ◽

Vol 110 (7) ◽

pp. 074515 ◽

Cited By ~ 8

Author(s):

Toshiyuki Usagawa ◽

Yota Kikuchi

Keyword(s):

Gas Sensors ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Voltage Control ◽

Hydrogen Gas ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Hydrogen Gas Sensors

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Pt–Ti–O gate silicon–metal–insulator–semiconductor field-effect transistor hydrogen gas sensors in harsh environments

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.067102 ◽

2016 ◽

Vol 55 (6) ◽

pp. 067102 ◽

Cited By ~ 4

Author(s):

Toshiyuki Usagawa ◽

Kazuhiro Ueda ◽

Akira Nambu ◽

Akio Yoneyama ◽

Yota Kikuchi ◽

...

Keyword(s):

Gas Sensors ◽

Field Effect ◽

Field Effect Transistor ◽

Hydrogen Gas ◽

Harsh Environments ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Hydrogen Gas Sensors ◽

Effect Transistor

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Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment

Journal of Materials Chemistry C ◽

10.1039/c9tc02468a ◽

2019 ◽

Vol 7 (29) ◽

pp. 8855-8860 ◽

Cited By ~ 3

Author(s):

Janghyuk Kim ◽

Marko J. Tadjer ◽

Michael A. Mastro ◽

Jihyun Kim

Keyword(s):

Plasma Treatment ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

Mode Operation

The threshold voltage of β-Ga2O3 metal–insulator–semiconductor field-effect transistors is controlled via remote fluorine plasma treatment, enabling an enhancement-mode operation under double gate condition.

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Threshold voltage drift of InPn‐channel enhancement mode metal‐insulator‐semiconductor field‐effect transistors

Applied Physics Letters ◽

10.1063/1.99423 ◽

1988 ◽

Vol 52 (6) ◽

pp. 495-497 ◽

Cited By ~ 5

Author(s):

J. G. Johnson ◽

S. R. Forrest ◽

C. R. Zeisse ◽

R. Nguyen

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

Voltage Drift

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Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V

Applied Physics Express ◽

10.7567/apex.8.036502 ◽

2015 ◽

Vol 8 (3) ◽

pp. 036502 ◽

Cited By ~ 6

Author(s):

Kean B. Lee ◽

Ivor Guiney ◽

Sheng Jiang ◽

Zaffar H. Zaidi ◽

Hongtu Qian ◽

...

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

Blocking Voltage ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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High‐Current‐Density Enhancement‐Mode Ultrawide‐Bandgap AlGaN Channel Metal–Insulator–Semiconductor Heterojunction Field‐Effect Transistors with a Threshold Voltage of 5 V

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.202000576 ◽

2021 ◽

pp. 2000576

Author(s):

Hao Xue ◽

Kamal Hussain ◽

Vishank Talesara ◽

Towhidur Razzak ◽

Mikhail Gaevski ◽

...

Keyword(s):

Current Density ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

High Current Density ◽

High Current ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

Density Enhancement

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Threshold-voltage control and enhancement-mode characteristics in multilayer tin disulfide field-effect transistors by gate-oxide passivation with an alkylphosphonic acid self-assembled monolayer

Journal of Applied Physics ◽

10.1063/1.4914488 ◽

2015 ◽

Vol 117 (10) ◽

pp. 104509 ◽

Cited By ~ 9

Author(s):

Ute Zschieschang ◽

Tanja Holzmann ◽

Alexander Kuhn ◽

Mahdieh Aghamohammadi ◽

Bettina V. Lotsch ◽

...

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Voltage Control ◽

Gate Oxide ◽

Self Assembled Monolayer ◽

Enhancement Mode ◽

Tin Disulfide ◽

Mode Characteristics ◽

Alkylphosphonic Acid

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Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3528334 ◽

2010 ◽

Vol 97 (25) ◽

pp. 253502 ◽

Cited By ~ 16

Author(s):

Yuji Urabe ◽

Masafumi Yokoyama ◽

Hideki Takagi ◽

Tetsuji Yasuda ◽

Noriyuki Miyata ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors

Applied Physics Letters ◽

10.1063/1.4758995 ◽

2012 ◽

Vol 101 (15) ◽

pp. 153504 ◽

Cited By ~ 21

Author(s):

Mina J. Hanna ◽

Han Zhao ◽

Jack C. Lee

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Schottky Emission ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Consequences of anion vacancy nearest‐neighbor hopping in III‐V compound semiconductors: Drift in InP metal‐insulator‐semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.334431 ◽

1985 ◽

Vol 57 (6) ◽

pp. 1956-1960 ◽

Cited By ~ 45

Author(s):

J. A. Van Vechten ◽

J. F. Wager

Keyword(s):

Field Effect ◽

Nearest Neighbor ◽

Field Effect Transistors ◽

Compound Semiconductors ◽

Anion Vacancy ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Fabrication of Hydrogenated Diamond Metal–Insulator–Semiconductor Field-Effect Transistors

Biosensors and Biodetection - Methods in Molecular Biology ◽

10.1007/978-1-4939-6911-1_15 ◽

2017 ◽

pp. 217-232 ◽

Cited By ~ 3

Author(s):

Jiangwei Liu ◽

Yasuo Koide

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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