High quality Fe‐doped semi‐insulating InP epitaxial layers grown by low‐pressure organometallic vapor phase epitaxy using tertiarybutylphosphine

1991 ◽  
Vol 58 (2) ◽  
pp. 170-172 ◽  
Author(s):  
Rong‐Ting Huang ◽  
Ami Appelbaum ◽  
Daniel Renner ◽  
Stanley W. Zehr
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Vapor Phase Epitaxy ◽  
Epitaxial Layers ◽  
Organometallic Vapor Phase Epitaxy ◽  
High Quality

Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy

2011 ◽  
Vol 50 (9) ◽  
pp. 095502 ◽  
Author(s):  
Yuki Shimahara ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
Fumitsugu Fukuyo ◽  
Tomoyuki Okada ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Si Doped

Selective growth of InP on patterned, nonplanar InP substrates by low-pressure organometallic vapor phase epitaxy

1990 ◽  
Vol 19 (11) ◽  
pp. 1313-1317 ◽  
Author(s):  
Rong -Ting Huang ◽  
Ching -Long Jiang ◽  
Ami Appelbaum ◽  
Daniel Renner ◽  
Stanley W. Zehr
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Vapor Phase Epitaxy ◽  
Selective Growth ◽  
Organometallic Vapor Phase Epitaxy ◽  
Inp Substrates

scholarly journals Growth of High-Quality Epitaxial InN Film with High-Speed Reactant Gas by Organometallic Vapor-Phase Epitaxy

2002 ◽  
Vol 41 (Part 2, No. 11B) ◽  
pp. L1321-L1324 ◽  
Author(s):  
Fu-Hsiang Yang ◽  
Jih-Sheng Hwang ◽  
Ying-Jay Yang ◽  
Kuei-Hsien Chen ◽  
Jih-Hsiang Wang
Keyword(s):  
Vapor Phase ◽  
High Speed ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
High Quality

Heavily dopedp‐GaAs grown by low‐pressure organometallic vapor phase epitaxy using liquid CCl4

1992 ◽  
Vol 72 (5) ◽  
pp. 2063-2065 ◽  
Author(s):  
L. W. Yang ◽  
P. D. Wright ◽  
V. Eu ◽  
Z. H. Lu ◽  
A. Majerfeld
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy
Sign in / Sign up

Export Citation Format

Share Document