Local strain measurement in a strain-engineered complementary metal-oxide-semiconductor device by geometrical phase analysis in the transmission electron microscope

2008 ◽  
Vol 93 (8) ◽  
pp. 081909 ◽  
Author(s):  
Jayhoon Chung ◽  
Guoda Lian ◽  
Lew Rabenberg
Keyword(s):  
Electron Microscope ◽  
Metal Oxide ◽  
Transmission Electron Microscope ◽  
Strain Measurement ◽  
Semiconductor Device ◽  
Complementary Metal Oxide Semiconductor ◽  
Local Strain ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Transmission Electron

Local Strain Measurement by Geometrical Phase Analysis in the Transmission Electron Microscope Applied to Strain-Engineered CMOS Devices

2008 ◽  
Vol 14 (S2) ◽  
pp. 388-389
Author(s):  
J Chung ◽  
G Lian ◽  
C Vartuli ◽  
S Rajagopalan ◽  
L Rabenberg
Keyword(s):  
Electron Microscope ◽  
New Mexico ◽  
Phase Analysis ◽  
Transmission Electron Microscope ◽  
Strain Measurement ◽  
Local Strain ◽  
Geometrical Phase ◽  
Transmission Electron

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008

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