Defects Induced by Deep Preamorphization and Their Effects on Metal Oxide Semiconductor Device Characteristics

Masayasu Miyake; Mitsutoshi Takahashi

doi:10.1149/1.1837523

Defects Induced by Deep Preamorphization and Their Effects on Metal Oxide Semiconductor Device Characteristics

Journal of The Electrochemical Society ◽

10.1149/1.1837523 ◽

1997 ◽

Vol 144 (3) ◽

pp. 1020-1024 ◽

Cited By ~ 6

Author(s):

Masayasu Miyake ◽

Mitsutoshi Takahashi

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Thin germanium-carbon alloy layers grown directly on silicon for metal-oxide-semiconductor device applications

Applied Physics Letters ◽

10.1063/1.2195008 ◽

2006 ◽

Vol 88 (15) ◽

pp. 152101 ◽

Cited By ~ 15

Author(s):

D. Q. Kelly ◽

I. Wiedmann ◽

J. P. Donnelly ◽

S. V. Joshi ◽

S. Dey ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Device Applications

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Investigation of band structure at metal-gate/high-k interface of metal oxide semiconductor device with high-k and metal gate stack

2012 12th International Workshop on Junction Technology ◽

10.1109/iwjt.2012.6212837 ◽

2012 ◽

Author(s):

Xiaolei Wang ◽

Wenwu Wang ◽

Kai Han ◽

Hong Yang ◽

Jing Zhang ◽

...

Keyword(s):

Band Structure ◽

Metal Oxide ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Gate Stack ◽

High K

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Improved Extrapolation Method of Ultrathin Oxide Thickness Using C-V Characteristics of Metal-Oxide-Semiconductor Device

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.l549 ◽

2002 ◽

Vol 41 (Part 2, No. 5B) ◽

pp. L549-L551

Author(s):

Hyundoek Yang ◽

Hyo Sik Chang ◽

Hyunsang Hwang

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Extrapolation Method ◽

Oxide Semiconductor ◽

Ultrathin Oxide

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Efficient ultraviolet electroluminescence from a Gd-implanted silicon metal–oxide–semiconductor device

Applied Physics Letters ◽

10.1063/1.1808488 ◽

2004 ◽

Vol 85 (16) ◽

pp. 3387-3389 ◽

Cited By ~ 49

Author(s):

J. M. Sun ◽

W. Skorupa ◽

T. Dekorsy ◽

M. Helm ◽

L. Rebohle ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Aspects of the Conductivity Modulation Enhancement Effect in a 4500 V Planar Metal Oxide Semiconductor Device and Its Electrical Characteristics

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.4751 ◽

1998 ◽

Vol 37 (Part 1, No. 9A) ◽

pp. 4751-4757 ◽

Cited By ~ 3

Author(s):

Kazuya Nakayama ◽

Hideo Matsuda

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Enhancement Effect ◽

Electrical Characteristics

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Inverse modeling of impact ionization rate through comparison of Monte Carlo simulation of Si metal‐oxide‐semiconductor device characteristics and experimental results

Journal of Applied Physics ◽

10.1063/1.354157 ◽

1993 ◽

Vol 74 (9) ◽

pp. 5859-5866 ◽

Cited By ~ 3

Author(s):

Syunji Imanaga ◽

Kunio Hane ◽

Yoshinori Hayafuji

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Metal Oxide ◽

Inverse Modeling ◽

Impact Ionization ◽

Semiconductor Device ◽

Ionization Rate ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Impact Ionization Rate

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Comprehensive understanding of the effect of electric dipole at high-k/SiO2 interface on the flatband voltage shift in metal-oxide-semiconductor device

Applied Physics Letters ◽

10.1063/1.3475774 ◽

2010 ◽

Vol 97 (6) ◽

pp. 062901 ◽

Cited By ~ 19

Author(s):

Xiaolei Wang ◽

Kai Han ◽

Wenwu Wang ◽

Xueli Ma ◽

Dapeng Chen ◽

...

Keyword(s):

Metal Oxide ◽

Electric Dipole ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Comprehensive Understanding ◽

Voltage Shift ◽

High K ◽

Flatband Voltage

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Epitaxial Gd2O3 on strained Si1−xGex layers for next generation complementary metal oxide semiconductor device application

Applied Physics Letters ◽

10.1063/1.4824422 ◽

2013 ◽

Vol 103 (15) ◽

pp. 153501 ◽

Cited By ~ 7

Author(s):

Kankat Ghosh ◽

Sudipta Das ◽

A. Fissel ◽

H. J. Osten ◽

Apurba Laha

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Next Generation ◽

Device Application

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GaAs metal–oxide–semiconductor device with titanium dioxide as dielectric layer: effect of oxide thickness on the device performance

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/44/15/155104 ◽

2011 ◽

Vol 44 (15) ◽

pp. 155104 ◽

Cited By ~ 15

Author(s):

Souvik Kundu ◽

Sandip Kumar Roy ◽

P Banerji

Keyword(s):

Titanium Dioxide ◽

Metal Oxide ◽

Dielectric Layer ◽

Semiconductor Device ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Device Performance ◽

Layer Effect

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GaAs metal-oxide-semiconductor device with HfO2∕TaN gate stack and thermal nitridation surface passivation

Applied Physics Letters ◽

10.1063/1.2749840 ◽

2007 ◽

Vol 90 (25) ◽

pp. 252904 ◽

Cited By ~ 59

Author(s):

Fei Gao ◽

S. J. Lee ◽

D. Z. Chi ◽

S. Balakumar ◽

D.-L. Kwong

Keyword(s):

Metal Oxide ◽

Surface Passivation ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Thermal Nitridation

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