Dependence of radiation‐induced interface traps on silicide gate stoichiometry in silicide/SiO2/Si devices

1987 ◽  
Vol 50 (5) ◽  
pp. 242-244
Author(s):  
S. Buchner ◽  
M. Natan ◽  
K. Kang ◽  
D. Gill
Keyword(s):  
Interface Traps ◽  
Radiation Induced

Gamma Irradiation Effects on 4H-SiC MOS Capacitors and MOSFETs

2006 ◽  
Vol 527-529 ◽  
pp. 1063-1066 ◽  
Author(s):  
Ayayi Claude Ahyi ◽  
S.R. Wang ◽  
John R. Williams
Keyword(s):  
Field Effect ◽  
Gamma Dose ◽  
Interface Traps ◽  
Valence Band Edge ◽  
Field Effect Mobility ◽  
Irradiation Effects ◽  
Mos Capacitors ◽  
Channel Mobility ◽  
Radiation Induced ◽  
Radiation Tolerant

The effects of gamma radiation on field effect mobility and threshold voltage have been studied for lateral n-channel 4H-SiC MOSFETs passivated with nitric oxide. MOS capacitors (n and p) and n-channel lateral MOSFETs were irradiated unbiased (floating contacts) for a total gamma dose of 6.8Mrad (Si). The MOS capacitors were used to study the radiation-induced interface traps and fixed oxide charge that affect the performance of the MOSFETs. Radiationinduced interface traps were observed near the SiC valence band edge and just above mid-gap, and field effect channel mobility was reduced by 18-20% following irradiation. Even so, 4HMOSFETs appear to be more radiation tolerant than Si devices.

An overview of radiation-induced interface traps in MOS structures

1989 ◽  
Vol 4 (12) ◽  
pp. 986-999 ◽  
Author(s):  
T R Oldham ◽  
F B McLean ◽  
H E Boesch ◽  
J M McGarrity
Keyword(s):  
Interface Traps ◽  
Radiation Induced ◽  
Mos Structures

scholarly journals Radiation-Induced Interface Traps in Power Mosfets

1986 ◽  
Vol 33 (6) ◽  
pp. 1454-1459 ◽  
Author(s):  
Gurbax Singh ◽  
Kenneth F. Galloway ◽  
Thomas J. Russell
Keyword(s):  
Interface Traps ◽  
Power Mosfets ◽  
Radiation Induced
Sign in / Sign up

Export Citation Format

Share Document