Effects of reactive ion etching on chemical vapor deposition

1987 ◽  
Vol 50 (5) ◽  
pp. 253-255 ◽  
Author(s):  
C. Y. Wong ◽  
P. E. Batson
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Reactive Ion Etching ◽  
Chemical Vapor ◽  
Ion Etching

Comparisons of Gallium Nitride and Indium Nitride Properties after CF4 / Argon Reactive Ion Etching

2002 ◽  
Vol 743 ◽  
Author(s):  
Marie Wintrebert-Fouquet ◽  
K. Scott ◽  
A. Butcher ◽  
Simon K H Lam
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Indium Nitride ◽  
Reactive Ion Etching ◽  
Film Surface ◽  
Chemical Vapor ◽  
Electrical Characteristics ◽  
Ion Etching ◽  
Before And After

ABSTRACTWe present a comparative study of the effects of low power reactive ion etching (RIE) on GaN and InN. This new, highly chemical, dry etching, using CF4 and Ar, has been developed for thin nitride films grown at low temperature in our laboratories. GaN films were grown by remote plasma enhanced-laser induced chemical vapor deposition and InN films were grown by radio-frequency RF reactive sputtering. Commercial GaN samples were also examined. Optical and electrical characteristics of the films are reported before and after removing 100 to 200 nm of the film surface by RIE. We have previously shown that the GaN films, although polycrystalline after growth, may be re-crystallized below the growth temperature. Removal of the surface oxide has been found to be imperative since a polycrystalline residue remains on the surface after re-crystallization.

Plasma Activated Chemical Vapor Deposition of Polythiophene Thin Films

1992 ◽  
Vol 247 ◽  
Author(s):  
J. D. Targove ◽  
P. D. Haaland ◽  
C. A. Kutsche
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Reactive Ion Etching ◽  
Chemical Vapor ◽  
Film Properties ◽  
Ion Etching ◽  
Plasma Technique ◽  
Argon Stream

ABSTRACTPolythiophene thin films have been deposited by a novel plasma technique which avoids the disadvantages of conventional plasma-based processes. In particular, the thiophene precursor is injected into an activated argon stream rather than into a plasma. The films produced are dense and uniform, with surface roughness of less than 1 nm. Other film properties are comparable to films deposited by more conventional methods. These films have been processed by reactive ion etching to produce micron-scale features.

Growth control of carbon nanotubes by plasma-enhanced chemical vapor deposition and reactive ion etching

Vacuum ◽  
2006 ◽  
Vol 80 (7) ◽  
pp. 798-801 ◽  
Author(s):  
Hideki Sato ◽  
Takamichi Sakai ◽  
Mai Matsubayashi ◽  
Koichi Hata ◽  
Hideto Miyake ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Reactive Ion Etching ◽  
Growth Control ◽  
Chemical Vapor ◽  
Ion Etching

Improved On-Current of 4H-SiC MOSFETs with a Three-Dimensional Gate Structure

2009 ◽  
Vol 615-617 ◽  
pp. 753-756
Author(s):  
Yuichiro Nanen ◽  
Hironori Yoshioka ◽  
Masato Noborio ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Three Dimensional ◽  
Side Wall ◽  
Chemical Vapor ◽  
Drain Current ◽  
Gate Oxide ◽  
Ion Etching ◽  
Gate Width ◽  
Gate Structure

4H-SiC (0001) MOSFETs with a three-dimensional gate structure, which has a top channel on the (0001) face and side-wall channels on the {11-20} face have been fabricated. The three-dimensional gate structures with a 1-5 m width and 0.8 m height have been formed by reactive ion etching, and the gate oxide has been deposited by plasma-enhanced chemical vapor deposition and then annealed in N2O ambient at 1300°C. The fabricated MOSFETs have exhibited superior characteristics: ION / IOFF, the subthreshold swing and VTH are 1010, 250 mV/decade and 3.5 V, respectively. The drain current normalized by the gate width is increasing with decreasing the gate width. The normalized drain current of a 1 m-wide MOSFET is ten times higher than that of a conventional planar MOSFET.

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