Optical reading of field‐effect transistors by phase‐space absorption quenching in a single InGaAs quantum well conducting channel

D. S. Chemla; I. Bar‐Joseph; C. Klingshirn; D. A. B. Miller; J. M. Kuo; T. Y. Chang

doi:10.1063/1.98088

Optical reading of field‐effect transistors by phase‐space absorption quenching in a single InGaAs quantum well conducting channel

Applied Physics Letters ◽

10.1063/1.98088 ◽

1987 ◽

Vol 50 (10) ◽

pp. 585-587 ◽

Cited By ~ 42

Author(s):

D. S. Chemla ◽

I. Bar‐Joseph ◽

C. Klingshirn ◽

D. A. B. Miller ◽

J. M. Kuo ◽

...

Keyword(s):

Phase Space ◽

Quantum Well ◽

Field Effect ◽

Field Effect Transistors ◽

Conducting Channel ◽

Ingaas Quantum Well

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Impact of H2 High-Pressure Annealing Onto InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack

IEEE Electron Device Letters ◽

10.1109/led.2015.2438433 ◽

2015 ◽

Vol 36 (7) ◽

pp. 672-674 ◽

Cited By ~ 15

Author(s):

Tae-Woo Kim ◽

Hyuk-Min Kwon ◽

Seung Heon Shin ◽

Chan-Soo Shin ◽

Won-Kyu Park ◽

...

Keyword(s):

High Pressure ◽

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Ingaas Quantum Well

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Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation

2011 International Electron Devices Meeting ◽

10.1109/iedm.2011.6131661 ◽

2011 ◽

Cited By ~ 95

Author(s):

M. Radosavljevic ◽

G. Dewey ◽

D. Basu ◽

J. Boardman ◽

B. Chu-Kung ◽

...

Keyword(s):

Quantum Well ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Source Separation ◽

Thin Body ◽

High K ◽

Well Field ◽

Ingaas Quantum Well ◽

High K Gate Dielectric

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Modulation-doped field-effect transistors with an 8-nm InGaAs/InAs/InGaAs quantum well

IEEE Electron Device Letters ◽

10.1109/55.748904 ◽

1999 ◽

Vol 20 (3) ◽

pp. 109-112 ◽

Cited By ~ 7

Author(s):

D. Xu ◽

J. Osaka ◽

Y. Umeda ◽

T. Suemitsu ◽

Y. Yamane ◽

...

Keyword(s):

Quantum Well ◽

Field Effect ◽

Field Effect Transistors ◽

Ingaas Quantum Well

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Cellular Monte Carlo investigation of InAs and InGaAs quantum well field effect transistors

2010 14th International Workshop on Computational Electronics ◽

10.1109/iwce.2010.5678003 ◽

2010 ◽

Author(s):

Fabio Alessio Marino ◽

Diego Guerra ◽

David K. Ferry ◽

Sthepen M. Goodnick ◽

Marco Saraniti

Keyword(s):

Monte Carlo ◽

Quantum Well ◽

Field Effect ◽

Field Effect Transistors ◽

Well Field ◽

Monte Carlo Investigation ◽

Cellular Monte Carlo ◽

Ingaas Quantum Well

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Improvement of the carrier transport property and interfacial behavior in InGaAs quantum well Metal-Oxide-Semiconductor Field-Effect-Transistors with sulfur passivation

Journal of Sensor Science and Technology ◽

10.46670/jsst.2020.29.4.266 ◽

2020 ◽

Vol 29 (4) ◽

pp. 266-269

Author(s):

Jun-Gyu Kim ◽

Dae-Hyun Kim

Keyword(s):

Quantum Well ◽

Field Effect ◽

Carrier Transport ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interfacial Behavior ◽

Sulfur Passivation ◽

Carrier Transport Property ◽

Ingaas Quantum Well

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Non-planar, multi-gate InGaAs quantum well field effect transistors with high-K gate dielectric and ultra-scaled gate-to-drain/gate-to-source separation for low power logic applications

2010 International Electron Devices Meeting ◽

10.1109/iedm.2010.5703306 ◽

2010 ◽

Cited By ~ 57

Author(s):

M. Radosavljevic ◽

G. Dewey ◽

J. M. Fastenau ◽

J. Kavalieros ◽

R. Kotlyar ◽

...

Keyword(s):

Quantum Well ◽

Low Power ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Source Separation ◽

High K ◽

Well Field ◽

Low Power Logic ◽

Ingaas Quantum Well

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Channel Thickness Dependence of InGaAs Quantum-Well Field-Effect Transistors With High- $\kappa$ Gate Dielectrics

IEEE Electron Device Letters ◽

10.1109/led.2012.2205214 ◽

2012 ◽

Vol 33 (9) ◽

pp. 1255-1257 ◽

Cited By ~ 8

Author(s):

Fei Xue ◽

Aiting Jiang ◽

Han Zhao ◽

Yen-Ting Chen ◽

Yanzhen Wang ◽

...

Keyword(s):

Quantum Well ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Thickness Dependence ◽

Well Field ◽

Channel Thickness ◽

Ingaas Quantum Well

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CARBON TUBE-BASED NANOTRANSISTORS

Сборник избранных статей по материалам научных конференций ГНИИ "Нацразвитие" (Санкт-Петербург, Май 2021) ◽

10.37539/may191.2021.91.83.045 ◽

2021 ◽

Author(s):

Марина Евгеньевна Сычева ◽

Светлана Анатольевна Микаева

Keyword(s):

Carbon Nanotube ◽

Low Power ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Manufacturing Technology ◽

Nanoscale Devices ◽

Conducting Channel ◽

Carbon Tube

В статье рассмотрены нанотранзисторы и основные свойства нанотрубок. Представлен обзор CNTFET транзисторов и основные особенности технологии их изготовления. Полевые транзисторы из углеродных нанотрубок (CNTFET) являются перспективными наноразмерными устройствами для реализации высокопроизводительных схем с очень плотной и низкой мощностью. Проводящий канал CNTFET представляет собой углеродную нанотрубку. The article deals with nanotransistors and the main properties of nanotubes. An overview of CNTFET transistors and the main features of their manufacturing technology is presented. Carbon nanotube field effect transistors (CNTFETs) are promising nanoscale devices for implementing high-performance circuits with very dense and low power. The CNTFET conducting channel is a carbon nanotube.

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Microwave detection performance of In 0.53 Ga 0.47 As/GaAs 0.5 Sb 0.5 quantum‐well tunnel field‐effect transistors

Electronics Letters ◽

10.1049/el.2016.0328 ◽

2016 ◽

Vol 52 (10) ◽

pp. 842-844 ◽

Cited By ~ 8

Author(s):

Wenjun Li ◽

Patrick Fay ◽

Tao Yu ◽

Judy Hoyt

Keyword(s):

Quantum Well ◽

Field Effect ◽

Field Effect Transistors ◽

Detection Performance ◽

Microwave Detection

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Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

Applied Physics Letters ◽

10.1063/1.4870257 ◽

2014 ◽

Vol 104 (13) ◽

pp. 131605 ◽

Cited By ~ 3

Author(s):

Thenappan Chidambaram ◽

Dmitry Veksler ◽

Shailesh Madisetti ◽

Andrew Greene ◽

Michael Yakimov ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Trap Density ◽

Oxide Semiconductor ◽

Interface Trap Density ◽

Interface Trap ◽

Hall Method

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