Channel Thickness Dependence of InGaAs Quantum-Well Field-Effect Transistors With High- $\kappa$ Gate Dielectrics

Fei Xue; Aiting Jiang; Han Zhao; Yen-Ting Chen; Yanzhen Wang; Fei Zhou; Jack Lee

doi:10.1109/led.2012.2205214

Channel Thickness Dependence of InGaAs Quantum-Well Field-Effect Transistors With High- $\kappa$ Gate Dielectrics

IEEE Electron Device Letters ◽

10.1109/led.2012.2205214 ◽

2012 ◽

Vol 33 (9) ◽

pp. 1255-1257 ◽

Cited By ~ 8

Author(s):

Fei Xue ◽

Aiting Jiang ◽

Han Zhao ◽

Yen-Ting Chen ◽

Yanzhen Wang ◽

...

Keyword(s):

Quantum Well ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Thickness Dependence ◽

Well Field ◽

Channel Thickness ◽

Ingaas Quantum Well

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Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation

2011 International Electron Devices Meeting ◽

10.1109/iedm.2011.6131661 ◽

2011 ◽

Cited By ~ 95

Author(s):

M. Radosavljevic ◽

G. Dewey ◽

D. Basu ◽

J. Boardman ◽

B. Chu-Kung ◽

...

Keyword(s):

Quantum Well ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Source Separation ◽

Thin Body ◽

High K ◽

Well Field ◽

Ingaas Quantum Well ◽

High K Gate Dielectric

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Cellular Monte Carlo investigation of InAs and InGaAs quantum well field effect transistors

2010 14th International Workshop on Computational Electronics ◽

10.1109/iwce.2010.5678003 ◽

2010 ◽

Author(s):

Fabio Alessio Marino ◽

Diego Guerra ◽

David K. Ferry ◽

Sthepen M. Goodnick ◽

Marco Saraniti

Keyword(s):

Monte Carlo ◽

Quantum Well ◽

Field Effect ◽

Field Effect Transistors ◽

Well Field ◽

Monte Carlo Investigation ◽

Cellular Monte Carlo ◽

Ingaas Quantum Well

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Non-planar, multi-gate InGaAs quantum well field effect transistors with high-K gate dielectric and ultra-scaled gate-to-drain/gate-to-source separation for low power logic applications

2010 International Electron Devices Meeting ◽

10.1109/iedm.2010.5703306 ◽

2010 ◽

Cited By ~ 57

Author(s):

M. Radosavljevic ◽

G. Dewey ◽

J. M. Fastenau ◽

J. Kavalieros ◽

R. Kotlyar ◽

...

Keyword(s):

Quantum Well ◽

Low Power ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Source Separation ◽

High K ◽

Well Field ◽

Low Power Logic ◽

Ingaas Quantum Well

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A semi-analytical model for III-V semiconductor quantum well field effect transistors

2014 International Conference on Electrical Engineering and Information & Communication Technology ◽

10.1109/iceeict.2014.6919039 ◽

2014 ◽

Author(s):

M. S. Rahman ◽

M. S. Islam ◽

A. Haque

Keyword(s):

Quantum Well ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Well Field ◽

Semiconductor Quantum Well

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Impact of H2 High-Pressure Annealing Onto InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack

IEEE Electron Device Letters ◽

10.1109/led.2015.2438433 ◽

2015 ◽

Vol 36 (7) ◽

pp. 672-674 ◽

Cited By ~ 15

Author(s):

Tae-Woo Kim ◽

Hyuk-Min Kwon ◽

Seung Heon Shin ◽

Chan-Soo Shin ◽

Won-Kyu Park ◽

...

Keyword(s):

High Pressure ◽

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Ingaas Quantum Well

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Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic applications

2009 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2009.5424361 ◽

2009 ◽

Cited By ~ 48

Author(s):

M. Radosavljevic ◽

B. Chu-Kung ◽

S. Corcoran ◽

G. Dewey ◽

M. K. Hudait ◽

...

Keyword(s):

Quantum Well ◽

Silicon Substrate ◽

Field Effect ◽

High Performance ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Short Channel ◽

High K ◽

Well Field ◽

Low Power Logic

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Modulation-doped field-effect transistors with an 8-nm InGaAs/InAs/InGaAs quantum well

IEEE Electron Device Letters ◽

10.1109/55.748904 ◽

1999 ◽

Vol 20 (3) ◽

pp. 109-112 ◽

Cited By ~ 7

Author(s):

D. Xu ◽

J. Osaka ◽

Y. Umeda ◽

T. Suemitsu ◽

Y. Yamane ◽

...

Keyword(s):

Quantum Well ◽

Field Effect ◽

Field Effect Transistors ◽

Ingaas Quantum Well

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III-V Quantum Well Field Effect Transistors on Silicon for Future High Performance and Low Power Logic Applications

2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) ◽

10.1109/csics.2011.6062431 ◽

2011 ◽

Cited By ~ 2

Author(s):

G. Dewey ◽

M. Radosavljevic ◽

N. Mukherjee

Keyword(s):

Quantum Well ◽

Low Power ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Well Field ◽

Low Power Logic

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ERRATA: "THz DETECTION BY RESONANT 2-D PLASMONS IN FIELD EFFECT DEVICES"

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156402001757 ◽

2002 ◽

Vol 12 (03) ◽

pp. 925-937 ◽

Cited By ~ 2

Author(s):

X. G. PERALTA ◽

S. J. ALLEN ◽

M. C. WANKE ◽

N. E. HARFF ◽

M. P. LILLY ◽

...

Keyword(s):

Quantum Well ◽

Field Effect ◽

Field Effect Transistor ◽

Field Effect Transistors ◽

Thz Radiation ◽

Double Quantum ◽

Double Quantum Well ◽

Well Field ◽

Field Effect Devices ◽

Effect Transistor

We demonstrate resonant detection of terahertz radiation by two-dimensional plasma waves in two field effect devices: a commercial field effect transistor (FET) and a double quantum well field effect transistor with a periodic grating gate. In both devices, the standing 2-D plasmon is tuned to the frequency of the THz radiation by varying the gate bias. The double quantum well field effect transistors exhibits a rich photoconductive response corresponding to spatial harmonics of the standing 2-D plasmons under the metal part of the periodic gate.

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High-performance InSb based quantum well field effect transistors for low-power dissipation applications

2009 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2009.5424207 ◽

2009 ◽

Cited By ~ 9

Author(s):

T. Ashley ◽

M. T. Emeny ◽

D. G. Hayes ◽

K. P. Hilton ◽

R. Jefferies ◽

...

Keyword(s):

Quantum Well ◽

Low Power ◽

Power Dissipation ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Well Field ◽

Low Power Dissipation

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