Photoluminescence and reflection high‐energy electron diffraction dynamics study of the interfaces in molecular beam epitaxially grown GaAs/Al0.33Ga0.67As(100) single quantum wells

J. Y. Kim; P. Chen; F. Voillot; A. Madhukar

doi:10.1063/1.98084

Photoluminescence and reflection high‐energy electron diffraction dynamics study of the interfaces in molecular beam epitaxially grown GaAs/Al0.33Ga0.67As(100) single quantum wells

Applied Physics Letters ◽

10.1063/1.98084 ◽

1987 ◽

Vol 50 (12) ◽

pp. 739-741 ◽

Cited By ~ 14

Author(s):

J. Y. Kim ◽

P. Chen ◽

F. Voillot ◽

A. Madhukar

Keyword(s):

Electron Diffraction ◽

Quantum Wells ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Single Quantum

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Photoluminescence and reflection high‐energy electron diffraction study of GaAs/AlxGa1−xAs(100) single quantum wells grown via molecular beam epitaxy employing two forms (As2and As4) of arsenic

Applied Physics Letters ◽

10.1063/1.103885 ◽

1990 ◽

Vol 57 (22) ◽

pp. 2333-2335 ◽

Cited By ~ 2

Author(s):

J. Y. Kim ◽

D. Bassi ◽

J. Ellis ◽

L. Jostad

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Quantum Wells ◽

Diffraction Study ◽

Molecular Beam ◽

Electron Diffraction Study ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Single Quantum

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Kinetics of the formation of normal and inverted molecular beam epitaxial interfaces: A reflection high-energy electron diffraction dynamics study of GaAs/AlxGa1−xAs(100) multiple quantum wells

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.583382 ◽

1986 ◽

Vol 4 (2) ◽

pp. 590 ◽

Cited By ~ 27

Author(s):

M. Y. Yen

Keyword(s):

Electron Diffraction ◽

Quantum Wells ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

High Energy Electron ◽

Molecular Beam Epitaxial ◽

Kinetics Of

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Combined Rayleigh and Raman scattering study of AlxGa1−xAs grown via molecular beam epitaxy under reflection high‐energy electron diffraction determined growth conditions

Applied Physics Letters ◽

10.1063/1.99311 ◽

1988 ◽

Vol 52 (1) ◽

pp. 42-44 ◽

Cited By ~ 2

Author(s):

W. C. Tang ◽

P. D. Lao ◽

A. Madhukar ◽

N. M. Cho

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Raman Scattering ◽

Molecular Beam ◽

Growth Conditions ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Scattering Study

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In-situ characterization of II/VI molecular beam epitaxy growth using reflection high-energy electron diffraction oscillations

Journal of Crystal Growth ◽

10.1016/0022-0248(94)91270-x ◽

1994 ◽

Vol 137 (1-2) ◽

pp. 187-194 ◽

Cited By ~ 12

Author(s):

J.M. Gaines

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

Molecular Beam Epitaxy Growth ◽

High Energy Electron ◽

In Situ Characterization

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Measurement of reflection high-energy electron diffraction oscillations during molecular-beam epitaxial growth of GaAs on a rotating substrate

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586241 ◽

1992 ◽

Vol 10 (4) ◽

pp. 1784 ◽

Cited By ~ 6

Author(s):

G. W. Turner

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Observation of reflection high-energy electron diffraction oscillation during metalorganic-molecular-beam epitaxy of AlAs and control of carbon incorporation

Journal of Applied Physics ◽

10.1063/1.1606515 ◽

2003 ◽

Vol 94 (8) ◽

pp. 4871 ◽

Cited By ~ 5

Author(s):

Sasikala Ganapathy ◽

Makoto Kurimoto ◽

Periyasamy Thilakan ◽

Kasturi Uesugi ◽

Ikuo Suemune ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Carbon Incorporation ◽

Metalorganic Molecular Beam Epitaxy ◽

And Control

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Surface reconstructions of Si(001) observed using reflection‐high‐ energy‐electron diffraction during molecular‐beam epitaxial growth from disilane

Applied Physics Letters ◽

10.1063/1.105694 ◽

1991 ◽

Vol 59 (26) ◽

pp. 3419-3421 ◽

Cited By ~ 24

Author(s):

S. M. Mokler ◽

W. K. Liu ◽

N. Ohtani ◽

B. A. Joyce

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Molecular Beam Epitaxial ◽

Surface Reconstructions ◽

Molecular Beam Epitaxial Growth

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Growth kinetics and step density in reflection high‐energy electron diffraction during molecular‐beam epitaxy

Journal of Applied Physics ◽

10.1063/1.341041 ◽

1988 ◽

Vol 63 (7) ◽

pp. 2272-2283 ◽

Cited By ~ 141

Author(s):

Shaun Clarke ◽

Dimitri D. Vvedensky

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Growth Kinetics ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Step Density

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Reflection High Energy Electron Diffraction Intensity Oscillations during the Growth of ZnSe on Cleaved GaAs(110) Surface by Molecular Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.l366 ◽

1996 ◽

Vol 35 (Part 2, No. 3B) ◽

pp. L366-L369 ◽

Cited By ~ 15

Author(s):

Hyun-Chul Ko ◽

Shigeo Yamaguchi ◽

Hitoshi Kurusu ◽

Yoichi Kawakami ◽

Shizuo Fujita ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Diffraction Intensity

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Reflection High-Energy-Electron Diffraction Study of Inp and InAs (100) In Gas-Source Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-216-517 ◽

1990 ◽

Vol 216 ◽

Cited By ~ 3

Author(s):

T. P. Chin ◽

B. W. Liang ◽

H. Q. Hou ◽

C. W. Tu

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

Electron Diffraction Study ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Group V ◽

Precise Control ◽

Gas Source

ABSTRACTInP and InAs (100) were grown by gas-source molecular-beam epitaxy (GSMBE) with arsine, phosphine, and elemental indium. Reflection high-energy-electron diffraction (RHEED) was used to monitor surface reconstructions and growth rates. (2×4) to (2×1) transition was observed on InP (100) as phosphine flow rate increased. (4×2) and (2×4) patterns were observed for In-stabilized and As-stabilized InAs surfaces, respectively. Both group-V and group-rn-induced RHEED oscillations were observed. The group-V surface desorption activation energy were measured to be 0.61 eV for InP and 0.19 eV for InAs. By this growth rate study, we are able to establish a precise control of V/HII atomic ratios in GSMBE of InP and InAs.

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