Photoluminescence and reflection high‐energy electron diffraction study of GaAs/AlxGa1−xAs(100) single quantum wells grown via molecular beam epitaxy employing two forms (As2and As4) of arsenic
1991 ◽
Vol 111
(1-4)
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pp. 88-92
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1995 ◽
Vol 146
(1-4)
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pp. 344-348
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1994 ◽
Vol 12
(2)
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pp. 1133
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1998 ◽
Vol 130-132
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pp. 382-386
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2006 ◽
Vol 290
(1)
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pp. 73-79
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