Photoluminescence and reflection high‐energy electron diffraction study of GaAs/AlxGa1−xAs(100) single quantum wells grown via molecular beam epitaxy employing two forms (As2and As4) of arsenic

1990 ◽  
Vol 57 (22) ◽  
pp. 2333-2335 ◽  
Author(s):  
J. Y. Kim ◽  
D. Bassi ◽  
J. Ellis ◽  
L. Jostad
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