Growth of diamond thin films by dc plasma chemical vapor deposition

1987 ◽  
Vol 50 (12) ◽  
pp. 728-729 ◽  
Author(s):  
Kazuhiro Suzuki ◽  
Atsuhito Sawabe ◽  
Hiroaki Yasuda ◽  
Tadao Inuzuka
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Dc Plasma ◽  
Plasma Chemical Vapor Deposition ◽  
Diamond Thin Films

Growth of diamond thin films by microwave plasma chemical vapor deposition process

1996 ◽  
Vol 11 (4) ◽  
pp. 1019-1024 ◽  
Author(s):  
H. C. Barshilia ◽  
B. R. Mehta ◽  
V. D. Vankar
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Strong Dependence ◽  
Chemical Vapor ◽  
Crystallographic Structure ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Diamond Thin Films

A very high vacuum compatible microwave plasma chemical vapor deposition system has been fabricated for the growth of diamond thin films. Microcrystalline diamond thin films have been grown on silicon substrates from the CH4−H2 gas mixture. Scanning electron microscopy and x-ray diffraction have been used to study the surface morphology and the crystallographic structure of the films. Optical emission spectroscopy has been used for the detection of chemical species present in the plasma. The strong dependence of the film microstructure on the intensity of CH emission line has been observed.

NITROGEN INCORPORATED HYDROGENATED AMORPHOUS CARBON THIN FILMS DEPOSITED BY MICROWAVE SURFACE-WAVE PLASMA CHEMICAL VAPOR DEPOSITION

2009 ◽  
Vol 23 (09) ◽  
pp. 2159-2165 ◽  
Author(s):  
SUDIP ADHIKARI ◽  
MASAYOSHI UMENO
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Wave ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Hydrogenated Amorphous Carbon ◽  
Plasma Chemical Vapor Deposition ◽  
Hydrogenated Amorphous

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.

Crystalline carbon nitride thin films deposited by microwave plasma chemical vapor deposition

2000 ◽  
Vol 9 (7) ◽  
pp. 545-549
Author(s):  
Zhang Yong-ping ◽  
Gu You-song ◽  
Chang Xiang-rong ◽  
Tian Zhong-zhuo ◽  
Shi Dong-xia ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Carbon Nitride ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition
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