Continuous (300 K) photopumped laser operation of AlxGa1−xAs‐GaAs quantum well heterostructures grown on strained‐layer GaAs on Si
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1994 ◽
Vol 7
(3)
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pp. 139-143
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1983 ◽
Vol 48
(8)
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pp. 671-673
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2000 ◽
Vol 29
(11)
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pp. 1346-1350
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1997 ◽
Vol 9
(9)
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pp. 1205-1207
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