Continuous (300 K) photopumped laser operation of AlxGa1−xAs‐GaAs quantum well heterostructures grown on strained‐layer GaAs on Si

1987 ◽  
Vol 50 (13) ◽  
pp. 836-838 ◽  
Author(s):  
R. W. Kaliski ◽  
N. Holonyak ◽  
K. C. Hsieh ◽  
D. W. Nam ◽  
J. W. Lee ◽  
...  
1992 ◽  
Vol 216 (1) ◽  
pp. 68-71 ◽  
Author(s):  
J.J. Coleman
Keyword(s):  

1985 ◽  
Vol 57 (1) ◽  
pp. 33-38 ◽  
Author(s):  
W. D. Laidig ◽  
Y. F. Lin ◽  
P. J. Caldwell

1994 ◽  
Vol 7 (3) ◽  
pp. 139-143 ◽  
Author(s):  
Tetsuro Ijichi ◽  
Michio Ohkubo ◽  
Akira Iketani ◽  
Toshio Kikuta

1983 ◽  
Vol 48 (8) ◽  
pp. 671-673 ◽  
Author(s):  
P. Gavrilovic ◽  
K. Hess ◽  
N. Holonyak ◽  
R.D. Burnham ◽  
T.L. Paoli ◽  
...  

1997 ◽  
Vol 71 (1) ◽  
pp. 78-80 ◽  
Author(s):  
D. K. Sengupta ◽  
W. Fang ◽  
J. I. Malin ◽  
J. Li ◽  
T. Horton ◽  
...  

1993 ◽  
Vol 74 (12) ◽  
pp. 7618-7620 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
G. Fernandes ◽  
S. Banerjee

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