Resonant tunneling spectroscopy of hot minority electrons injected in gallium arsenide quantum wells

1987 ◽  
Vol 50 (14) ◽  
pp. 930-932 ◽  
Author(s):  
Federico Capasso ◽  
Susanta Sen ◽  
Alfred Y. Cho ◽  
Albert L. Hutchinson
1989 ◽  
Vol 39 (2) ◽  
pp. 1375-1377 ◽  
Author(s):  
Yasuhito Zohta ◽  
Tetsuro Nozu ◽  
Masao Obara

1994 ◽  
Vol 37 (4-6) ◽  
pp. 721-724 ◽  
Author(s):  
T.S. Turner ◽  
P.M. Martin ◽  
L. Eaves ◽  
H.B. Evans ◽  
P.A. Harrison ◽  
...  

1994 ◽  
Vol 49 (8) ◽  
pp. 5434-5437 ◽  
Author(s):  
Shi-rong Jin ◽  
Zhong-ying Xu ◽  
Jin-sheng Luo

1992 ◽  
Vol 45 (15) ◽  
pp. 8749-8751 ◽  
Author(s):  
C. Kutter ◽  
V. Chitta ◽  
J. C. Maan ◽  
V. I. Fal’ko ◽  
M. L. Leadbeater ◽  
...  

2010 ◽  
Vol 21 (48) ◽  
pp. 485402 ◽  
Author(s):  
Wonyoung Lee ◽  
Neil P Dasgupta ◽  
Hee Joon Jung ◽  
Jung-Rok Lee ◽  
Robert Sinclair ◽  
...  

1988 ◽  
Vol 38 (15) ◽  
pp. 10718-10723 ◽  
Author(s):  
P. A. Schulz ◽  
C. E. T. Gonçalves da Silva

1994 ◽  
Vol 08 (21n22) ◽  
pp. 1377-1385 ◽  
Author(s):  
S.A. GURVITZ ◽  
H.J. LIPKIN ◽  
Ya. S. PRAGER

A new method using Fock space wave functions is proposed for studying resonant tunneling in semiconductor quantum wells. The use of binary occupation numbers as dynamical variables, rather than properties of individual electrons, manifestly takes account of electron statistics, which enables investigation of the influence of the Pauli principle on resonant tunneling in the presence of inelastic scattering. Applied to the evaluation of the resonant current in semiconductor heterostructures, our approach predicts considerable deviations from the one-electron and rate equations pictures.


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