A comparison of the carrier density at the surface of quantum wells for different crystal orientations of silicon, gallium arsenide, and indium arsenide
Keyword(s):
Keyword(s):
2008 ◽
Vol 52
(3)
◽
pp. 673-677
◽
2002 ◽
Vol 316-317
◽
pp. 198-201
◽
2014 ◽
Vol 25
◽
pp. 76-83
◽
Keyword(s):
Keyword(s):
1998 ◽
Vol 50
(1-4)
◽
pp. 243-249
◽
Keyword(s):
2011 ◽
Vol 143-144
◽
pp. 216-219