scholarly journals A comparison of the carrier density at the surface of quantum wells for different crystal orientations of silicon, gallium arsenide, and indium arsenide

2013 ◽  
Vol 103 (16) ◽  
pp. 162107 ◽  
Author(s):  
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Chris Bowen
1999 ◽  
Vol 74 (22) ◽  
pp. 3359-3361 ◽  
Author(s):  
C. Jordan ◽  
J. F. Donegan ◽  
J. Hegarty ◽  
B. J. Roycroft ◽  
S. Taniguchi ◽  
...  

2002 ◽  
Vol 316-317 ◽  
pp. 198-201 ◽  
Author(s):  
A.J. Kent ◽  
A.V. Akimov ◽  
S.A. Cavill ◽  
R.J. Bellingham ◽  
M. Henini

2015 ◽  
Vol 118 (17) ◽  
pp. 175702 ◽  
Author(s):  
N. Shimosako ◽  
Y. Inose ◽  
H. Satoh ◽  
K. Kinjo ◽  
T. Nakaoka ◽  
...  

1996 ◽  
Vol 32 (1) ◽  
pp. 72-78 ◽  
Author(s):  
MINORU OMURA ◽  
AKIYO TANAKA ◽  
MIYUKI HIRATA ◽  
MANGEN ZHAO ◽  
YUJI MAKITA ◽  
...  

2007 ◽  
Vol 90 (15) ◽  
pp. 151122 ◽  
Author(s):  
Chi-Feng Huang ◽  
Chih-Feng Lu ◽  
Tsung-Yi Tang ◽  
Jeng-Jie Huang ◽  
C. C. Yang

2011 ◽  
Vol 143-144 ◽  
pp. 216-219
Author(s):  
Yu Wu

Time-resolved circularly polarized pump-probe spectroscopy is used to study the carrier density dependence of the electron spin polarization dynamics in AlGaAs/GaAs multi quantum wells at room temperature. Experimental results show that the spin relaxation time increases with the carrier density, which is in conformity with D'yakonov-Perel relaxation mechanism.


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