Coherent model for resonant tunneling of electrons in double quantum wells under electric fields

1994 ◽  
Vol 49 (8) ◽  
pp. 5434-5437 ◽  
Author(s):  
Shi-rong Jin ◽  
Zhong-ying Xu ◽  
Jin-sheng Luo
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Resonant Tunneling ◽  
Double Quantum

Resonant tunneling via stress-induced valence-band mixings in GaAs-(Ga,Al)As asymmetrical double quantum wells

1991 ◽  
Vol 44 (11) ◽  
pp. 5635-5647 ◽  
Author(s):  
P. Lefebvre ◽  
P. Bonnel ◽  
B. Gil ◽  
H. Mathieu
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Resonant Tunneling ◽  
Double Quantum

Resonant tunneling in GaAs/AlGaAs double quantum wells

1992 ◽  
Vol 267 (1-3) ◽  
pp. 377-382 ◽  
Author(s):  
J.P. Eisentein ◽  
T.J. Gramila ◽  
L.N. Pfeiffer ◽  
K.W. West
Keyword(s):  
Quantum Wells ◽  
Resonant Tunneling ◽  
Double Quantum

Effect of Electric Fields in Coupled Double Quantum Wells

1987 ◽  
Vol 102 ◽  
Author(s):  
Y. J. Chen ◽  
Emil S. Koteles ◽  
B. Elman ◽  
C. A. Armiento
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Electric Fields ◽  
Stark Effect ◽  
Double Quantum ◽  
Single Quantum Well ◽  
Quantum Confined Stark Effect ◽  
Quantum Well Structure ◽  
Double Quantum Well ◽  
Novel Structure

ABSTRACTWe present a detailed experimental study of the influence of electric fields on exciton states in a GaAs/AlGaAs coupled double quantum well structure and discuss the advantages of using this novel structure. The coupling of electronic states in the two quantum wells, due to the narrowness of the barrier between them, leads to an enhancement of the quantum-confined Stark effect (by as much as five times that of the single quantum well case). From the measured energies of the exciton transitions, splittings of the levels in a coupled double quantum well structure were derived without recourse to a theoretical model.

Influence of polarization-induced electric fields on coherent electron tunneling in AlN/GaN coupled double quantum wells

2010 ◽  
Vol 108 (11) ◽  
pp. 113107
Author(s):  
L. B. Cen ◽  
B. Shen ◽  
C. C. Huang ◽  
F. J. Xu ◽  
Z. X. Qin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Electron Tunneling ◽  
Double Quantum

Excitonic spectra of asymmetric, coupled double quantum wells in electric fields

1989 ◽  
Vol 39 (14) ◽  
pp. 10133-10143 ◽  
Author(s):  
Johnson Lee ◽  
M. O. Vassell ◽  
Emil S. Koteles ◽  
B. Elman
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Double Quantum

SOME INVESTIGATIONS OF THE PHYSICAL PROPERTIES OF (Ga, In)As-GaAs HETEROSTRUCTURES GROWN WITH BUILT-IN PIEZOELECTRIC FIELD

1995 ◽  
Vol 09 (09) ◽  
pp. 1025-1044 ◽  
Author(s):  
B. GIL ◽  
P. BIGENWALD ◽  
K.J. MOORE ◽  
P. BORING ◽  
K. WOODBRIDGE
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Binding Energies ◽  
Double Quantum ◽  
Many Body ◽  
Charge Effects ◽  
Strained Layer ◽  
Piezoelectric Field ◽  
Many Body Interactions ◽  
Piezo Electric

The properties of single and double (Ga,ln)As-GaAs strained-layer quantum wells embedded in (pin) diodes are studied. These properties are found to be orientation-dependent, mainly due to the existence of a strong internal piezoelectric field in the (Ga,ln)As layers when the growth axis is polar. We first calculate how large the influences of the (pin) and piezoelectric field are to produce carrier tunnelling out of the active part of the heterostructure. This enables us to compute the carrier’s lifetime in the heterostructures and the corresponding resonance widths. Next, we compare the binding energies of interacting electron and hole pairs in double quantum wells with or without internal piezo electric fields. We show that the exciton binding energy is less sensitive to the piezoelectric field than the oscillator strength. Under photo excitation, many body-effects and bandgap renormalization can be easily produced in strained-layer quantum wells with internal built-in piezo-electric fields. We illuminated at low temperature single and double Ga 0.92 ln 0.08 As-GaAs strained layer quantum wells grown either along the (001) or (111) direction, and tuned over several decades the densities of photo-injected carriers. The comparison between experimental data and the results of a Hartree calculation including the space charge effects reveals that many body interactions are efficiently photo-induced in the (111)-grown samples. Moreover, we show that the tunnelling of the two lowest-lying heavy-hole levels can be stimulated for moderate carrier densities making such structures promissive in order to realise self electrooptic effect device (SEED) modulators.

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