New approach to the kinetics of silicon vapor phase epitaxy at reduced temperature

1987 ◽  
Vol 50 (22) ◽  
pp. 1575-1577 ◽  
Author(s):  
D. J. Robbins ◽  
I. M. Young
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
New Approach ◽  
Silicon Vapor ◽  
Kinetics Of ◽  
Reduced Temperature

Bulk Gan Crystal With Low Defect Density Grown By Hydride Vapor Phase Epitaxy

1997 ◽  
Vol 482 ◽  
Author(s):  
A. Usui
Keyword(s):  
Vapor Phase ◽  
Flat Surface ◽  
Defect Density ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Extended Defect ◽  
New Approach ◽  
Bulk Gan ◽  
Gan Crystal ◽  
Reflectance Measurements

AbstractA new approach to grow thick GaN layers by hydride vapor phase epitaxy (HVPE) is described. Selective growth is carried out at the beginning of growth. The coalescence of selectively grown facet structures makes it possible to achieve a flat surface over the entire substrate. As a result, crack-free GaN films with mirror-like surfaces are successfully grown even to a thickness of about 100 μm on a 2-inch-diameter sapphire substrate. The extended defect density is as low as 6×107 cm−2. The reduction mechanism for dislocation is discussed based on TEM observation. The high optical properties of FIELO GaN are confirmed by 5 K photoluminescence and reflectance measurements.

Misfit dislocation formation in p/p+ silicon vapor-phase epitaxy

2000 ◽  
Vol 209 (4) ◽  
pp. 716-723 ◽  
Author(s):  
H. Fukuto ◽  
P. Feichtinger ◽  
G.D. U'Ren ◽  
S. Lindo ◽  
M.S. Goorsky ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Misfit Dislocation ◽  
Vapor Phase Epitaxy ◽  
Silicon Vapor ◽  
Dislocation Formation

scholarly journals Modeling of Silicon Vapor Phase Epitaxy Using Stefan-Maxwell Formalism

2004 ◽  
Vol 45 (7) ◽  
pp. 2395-2402 ◽  
Author(s):  
Ramanujam Rajagopal ◽  
Yalamanchili Krishna Rao
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Silicon Vapor

Growth Kinetics of Hg1-xCdxTe Epilayers by Semiclosed Open-Tube Isothermal Vapor Phase Epitaxy

1998 ◽  
Vol 37 (Part 1, No. 9A) ◽  
pp. 4914-4918 ◽  
Author(s):  
Bonheun Koo ◽  
Jifeng Wang ◽  
Yukio Ishikawa ◽  
Chan-Gyu Lee ◽  
Minoru Isshiki
Keyword(s):  
Vapor Phase ◽  
Growth Kinetics ◽  
Vapor Phase Epitaxy ◽  
Open Tube ◽  
Kinetics Of

Reaction Kinetics of GaN Metal-Organic Vapor-Phase Epitaxy Analyzed by Multi-Scale Profiles of Growth Rate

2019 ◽  
Vol 25 (8) ◽  
pp. 507-512 ◽  
Author(s):  
Masakazu Sugiyama ◽  
Satoshi Yasukochi ◽  
Tomonari Shioda ◽  
Yukihiro Shimogaki ◽  
Yoshiaki Nakano
Keyword(s):  
Growth Rate ◽  
Reaction Kinetics ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Multi Scale ◽  
Organic Vapor ◽  
Metal Organic ◽  
Kinetics Of

Ammonia-free high temperature metalorganic vapor phase epitaxy (AFHT-MOVPE): a new approach to high quality AlN growth

CrystEngComm ◽  
2018 ◽  
Vol 20 (45) ◽  
pp. 7364-7370 ◽  
Author(s):  
Xu-Qiang Shen ◽  
Kazutoshi Kojima ◽  
Mitsuaki Shimizu ◽  
Hajime Okumura
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Growth Technique ◽  
New Approach

We propose a new growth technique, ammonia-free high temperature metalorganic vapor phase epitaxy (AFHT-MOVPE), for high quality AlN growth.

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