Bulk Gan Crystal With Low Defect Density Grown By Hydride Vapor Phase Epitaxy

1997 ◽  
Vol 482 ◽  
Author(s):  
A. Usui
Keyword(s):  
Vapor Phase ◽  
Flat Surface ◽  
Defect Density ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Extended Defect ◽  
New Approach ◽  
Bulk Gan ◽  
Gan Crystal ◽  
Reflectance Measurements

AbstractA new approach to grow thick GaN layers by hydride vapor phase epitaxy (HVPE) is described. Selective growth is carried out at the beginning of growth. The coalescence of selectively grown facet structures makes it possible to achieve a flat surface over the entire substrate. As a result, crack-free GaN films with mirror-like surfaces are successfully grown even to a thickness of about 100 μm on a 2-inch-diameter sapphire substrate. The extended defect density is as low as 6×107 cm−2. The reduction mechanism for dislocation is discussed based on TEM observation. The high optical properties of FIELO GaN are confirmed by 5 K photoluminescence and reflectance measurements.

Growth and doping of bulk GaN by hydride vapor phase epitaxy

2020 ◽  
Vol 29 (2) ◽  
pp. 026104 ◽  
Author(s):  
Yu-Min Zhang ◽  
Jian-Feng Wang ◽  
De-Min Cai ◽  
Guo-Qiang Ren ◽  
Yu Xu ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Bulk Gan

Properties of Ge-doped, high-quality bulk GaN crystals fabricated by hydride vapor phase epitaxy

2010 ◽  
Vol 312 (24) ◽  
pp. 3569-3573 ◽  
Author(s):  
Yuichi Oshima ◽  
Takehiro Yoshida ◽  
Kazutoshi Watanabe ◽  
Tomoyoshi Mishima
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
High Quality ◽  
Bulk Gan

scholarly journals Hydride vapor phase epitaxy reactor for bulk GaN growth

2019 ◽  
Author(s):  
Vladislav Voronenkov ◽  
Natalia Bochkareva ◽  
Ruslan Gorbunov ◽  
Andrey Zubrilov ◽  
Viktor Kogotkov ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Bulk Gan

Low Temperature Growth Mechanism of GaN Crystal by Hydride Vapor Phase Epitaxy

2003 ◽  
Vol 764 ◽  
Author(s):  
Hai-Ping Liu ◽  
In-Gann Chen ◽  
Jenq-Dar Tsay ◽  
Wen-Yueh Liu ◽  
Yih-Der Guo ◽  
...  
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Growth Mechanism ◽  
Growth Temperature ◽  
Vapor Phase Epitaxy ◽  
High Index ◽  
Hydride Vapor Phase Epitaxy ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Gan Crystal

AbstractThe low temperature growth of GaN crystal using epitaxy lateral overgrowth (ELO) on SiO2 dot pattern below 900°C by hydride vapor phase epitaxy (HVPE) have been studied. It is observed that the growth rate of GaN hexagonal pyramidal crystals along [1101] direction increases as growth temperature decreases. At low temperature of ∼ 850°C, hexagonal GaN columnar crystals with high index facet at the top can be observed. It is proposed that the surface diffusion length of precursors, such as NH3 and GaCl, decreases at lower temperature that reduces the probability of desorption and increase the lifetime. The condensation of Ga liquid droplets on the GaN surface will change the relative stability of {1101} facet. Therefore, the formation of high index planes such as {2122} facet on the top of hexagonal column along with the formation of stacking fault on the (0001) plane can be observed. A detailed study of the effect of growth temperature on the crystal growth mechanism will be presented.

Hydride Vapor Phase Epitaxy Reactor for Bulk GaN Substrate Manufacturing

2019 ◽  
Author(s):  
V. Voronenkov ◽  
N. Bochkareva ◽  
R. Gorbunov ◽  
A. Zubrilov ◽  
V. Kogotkov ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Bulk Gan

Thermal and optical properties of bulk GaN crystals fabricated through hydride vapor phase epitaxy with void-assisted separation

2005 ◽  
Vol 98 (10) ◽  
pp. 103509 ◽  
Author(s):  
Yuichi Oshima ◽  
Takayuki Suzuki ◽  
Takeshi Eri ◽  
Yusuke Kawaguchi ◽  
Kazutoshi Watanabe ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Bulk Gan

Highly Stable Bulk GaN Photoanode Grown by Hydride Vapor-Phase Epitaxy for Photoelectrochemical Water Splitting

2019 ◽  
Vol 166 (4) ◽  
pp. H103-H107 ◽  
Author(s):  
Hyojung Bae ◽  
Haseong Kim ◽  
Jin-Woo Ju ◽  
Dae-Woo Jeon ◽  
Sang-Wan Ryu ◽  
...  
Keyword(s):  
Water Splitting ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Photoelectrochemical Water Splitting ◽  
Bulk Gan

scholarly journals In-Situ Preparation of GaN Sacrificial Layers on Sapphire Substrate in MOVPE Reactor for Self-Separation of the Overgrown GaN Crystal

Crystals ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1100
Author(s):  
Sepideh Faraji ◽  
Elke Meissner ◽  
Roland Weingärtner ◽  
Sven Besendörfer ◽  
Jochen Friedrich
Keyword(s):  
Vapor Phase ◽  
Sapphire Substrate ◽  
Vapor Phase Epitaxy ◽  
The Self ◽  
Etching Process ◽  
Hydride Vapor Phase Epitaxy ◽  
Etching Parameters ◽  
Gan Crystal

GaN layers on sapphire substrates were prepared by using metal organic vapor phase epitaxy (MOVPE) combined with an in-situ H2 etching process for the purpose of later self-separation of thick GaN crystals produced by hydride vapor phase epitaxy (HVPE) on such substrates. The etching process results in deep pits and long voids that formed on the surface and along the lower interface between GaN and sapphire, respectively. The pits, which were investigated by SEM analysis, can be modified in their aspect ratio and density by controlling the etching parameters. Using a proper set of in-situ etching parameters, a seed layer with internal voids can be prepared, which is suitable for HVPE overgrowth and the self-separation process. The quality of the in-situ-etched seed GaN layer and overgrown GaN crystal were characterized by X-ray diffraction (XRD) and defect selective etching (DSE). With the aid of atomic force microscopy (AFM) in tapping mode, the interface morphology of the separated GaN crystal was analyzed. The crystal quality of the separated HVPE-GaN crystal is comparable to the crystal grown on untreated GaN MOVPE-seed, which did not separate from the sapphire substrate. The introduced technique to promote the crystal separation during the HVPE process has no obvious drawback on the quality of the grown GaN crystals. Using this technique, the self-separation occurs more gently due to a weakened interface between GaN/sapphire. The conventional separation from an untreated seed by pure thermomechanical action results in higher mechanical forces on the crystal and consequently much higher risk of crystal breakage.

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