Reaction Kinetics of GaN Metal-Organic Vapor-Phase Epitaxy Analyzed by Multi-Scale Profiles of Growth Rate

2019 ◽  
Vol 25 (8) ◽  
pp. 507-512 ◽  
Author(s):  
Masakazu Sugiyama ◽  
Satoshi Yasukochi ◽  
Tomonari Shioda ◽  
Yukihiro Shimogaki ◽  
Yoshiaki Nakano
Keyword(s):  
Growth Rate ◽  
Reaction Kinetics ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Multi Scale ◽  
Organic Vapor ◽  
Metal Organic ◽  
Kinetics Of

Effect of cap-layer growth rate on morphology and luminescence of InAs∕InP(001) quantum dots grown by metal-organic vapor phase epitaxy

2006 ◽  
Vol 100 (3) ◽  
pp. 033508 ◽  
Author(s):  
A. Michon ◽  
I. Sagnes ◽  
G. Patriarche ◽  
G. Beaudoin ◽  
M. N. Mérat-Combes ◽  
...  
Keyword(s):  
Growth Rate ◽  
Quantum Dots ◽  
Vapor Phase ◽  
Layer Growth ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Layer Growth Rate ◽  
Cap Layer ◽  
Metal Organic

High growth rate metal organic vapor phase epitaxy GaN

2008 ◽  
Vol 310 (17) ◽  
pp. 3950-3952 ◽  
Author(s):  
Koh Matsumoto ◽  
Hiroki Tokunaga ◽  
Akinori Ubukata ◽  
Kazumasa Ikenaga ◽  
Yasushi Fukuda ◽  
...  
Keyword(s):  
Growth Rate ◽  
Vapor Phase ◽  
High Growth ◽  
High Growth Rate ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

The Chemistry of GaN Growth

2000 ◽  
Vol 639 ◽  
Author(s):  
T.F. Kuech ◽  
Shulin Gu ◽  
Ramchandra Wate ◽  
Ling Zhang ◽  
Jingxi Sun ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Density Functional ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Computational Techniques ◽  
Organic Vapor ◽  
Metal Organic ◽  
Experimental Approaches ◽  
Underlying Mechanisms ◽  
Kinetics Of

ABSTRACTThe development of new chemically based growth techniques has opened the range of possible GaN applications. This paper reviews some of the challenges in the chemically based growth of GaN and related materials. Ammonothermal-based growth, hydride vapor phase epitaxy and metal organic vapor phase epitaxy (MOVPE) are chemically complex systems wherein the underlying mechanisms of growth are not well understood at present. All these systems require substantial experimental and theoretical efforts to determine the nature and kinetics of GaN growth. In the case of metal organic vapor phase epitaxy, the application of computational techniques based on density functional theory have augmented the more conventional experimental approaches to determining the growth chemistry. These chemical reaction schemes, when combined with computational thermal-fluid models of the reactor environment, provide the opportunity to predict growth rates, uniformity and eve ntually materials properties.

Metal-organic vapor phase epitaxy of the quaternary metastable alloy In1–xGaxAs1−yBiy and its kinetics of growth

2020 ◽  
Vol 538 ◽  
pp. 125611
Author(s):  
Yingxin Guan ◽  
Ayushi Rajeev ◽  
Susan E. Babcock ◽  
Luke J. Mawst ◽  
Thomas F. Kuech
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic ◽  
Kinetics Of ◽  
Metastable Alloy

GaN Selective Area Metal–Organic Vapor Phase Epitaxy: Prediction of Growth Rate Enhancement by Vapor Phase Diffusion Model

2007 ◽  
Vol 46 (No. 43) ◽  
pp. L1045-L1047 ◽  
Author(s):  
Tomonari Shioda ◽  
Yuki Tomita ◽  
Masakazu Sugiyama ◽  
Yukihiro Shimogaki ◽  
Yoshiaki Nakano
Keyword(s):  
Growth Rate ◽  
Diffusion Model ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Rate Enhancement ◽  
Phase Diffusion ◽  
Organic Vapor ◽  
Selective Area ◽  
Metal Organic

Kinetics of low-temperature activation of acceptors in magnesium-doped gallium nitride epilayers grown by metal-organic vapor-phase epitaxy

2006 ◽  
Vol 99 (3) ◽  
pp. 033703 ◽  
Author(s):  
E. Litwin-Staszewska ◽  
R. Piotrzkowski ◽  
L. Dmowski ◽  
P. Prystawko ◽  
R. Czernecki ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Low Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic ◽  
Temperature Activation ◽  
Kinetics Of
Sign in / Sign up

Export Citation Format

Share Document