The Kinetics of Very Low Temperature (∼300°C) Silicon Epitaxial Growth by Confined Plasma Enhanced Chemical Vapor Deposition

1994 ◽  
Vol 141 (12) ◽  
pp. 3584-3587 ◽  
Author(s):  
Ming‐Deng Shieh ◽  
Chiapyng Lee ◽  
Tri‐Rung Yew
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Kinetics Of ◽  
Very Low Temperature

Selective Si epitaxial growth by plasma‐enhanced chemical vapor deposition at very low temperature

1992 ◽  
Vol 60 (4) ◽  
pp. 442-444 ◽  
Author(s):  
K. Baert ◽  
P. Deschepper ◽  
J. Poortmans ◽  
J. Nijs ◽  
R. Mertens
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Very Low Temperature

Low-Temperature Epitaxial Growth of Silicon and Silicon-Germanium Alloy by Ultrahigh-Vacuum Chemical Vapor Deposition

1994 ◽  
Vol 33 (Part 1, No.1A) ◽  
pp. 240-246 ◽  
Author(s):  
Tz-Guei Jung ◽  
Chun-Yen Chang ◽  
Ting-Chang Chang ◽  
Horng-Chih Lin ◽  
Tom Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Silicon Germanium ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Germanium Alloy

Low‐temperature epitaxial growth of silicon by low‐pressure chemical vapor deposition

1988 ◽  
Vol 52 (13) ◽  
pp. 1053-1055 ◽  
Author(s):  
D. Meakin ◽  
M. Stobbs ◽  
J. Stoemenos ◽  
N. A. Economou
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical

Epitaxial Growth of Si1-yCy Film by Low Temperature Chemical Vapor Deposition

2000 ◽  
Vol 39 (Part 2, No. 11A) ◽  
pp. L1078-L1080 ◽  
Author(s):  
Syuhei Yagi ◽  
Katsuya Abe ◽  
Akira Yamada ◽  
Makoto Konagai
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor
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