Photoluminescence properties of nitrogen‐doped ZnSe layers grown by molecular beam epitaxy with low‐energy ion doping

1986 ◽  
Vol 49 (20) ◽  
pp. 1348-1350 ◽  
Author(s):  
T. Mitsuyu ◽  
K. Ohkawa ◽  
O. Yamazaki
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Low Energy ◽  
Photoluminescence Properties ◽  
Nitrogen Doped ◽  
Ion Doping

Photoluminescence properties of nitrogen‐doped ZnSe grown by molecular‐beam epitaxy

1994 ◽  
Vol 64 (1) ◽  
pp. 91-93 ◽  
Author(s):  
Ziqiang Zhu ◽  
Kazuhisa Takebayashi ◽  
Kiyotake Tanaka ◽  
Takashi Ebisutani ◽  
Junji Kawamata ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Photoluminescence Properties ◽  
Nitrogen Doped

In-situ low energy BF2+ion doping for silicon molecular beam epitaxy

1982 ◽  
Vol 3 (5) ◽  
pp. 138-140 ◽  
Author(s):  
R.G. Swartz ◽  
J.H. McFee ◽  
A.M. Voshchenkov ◽  
S.N. Finegan ◽  
V.D. Archer ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Low Energy ◽  
Ion Doping

Ion‐beam doping of GaAs with low‐energy (100 eV) C+using combined ion‐beam and molecular‐beam epitaxy

1995 ◽  
Vol 77 (1) ◽  
pp. 146-152 ◽  
Author(s):  
Tsutomu Iida ◽  
Yunosuke Makita ◽  
Shinji Kimura ◽  
Stefan Winter ◽  
Akimasa Yamada ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam ◽  
Low Energy
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