Electrical and photoluminescence properties of Ge-doped n-type GaAs Grown by molecular beam epitaxy

1983 ◽  
Vol 12 (1) ◽  
pp. 71-91 ◽  
Author(s):  
Ai-zhen Li ◽  
Shang-heng Xin ◽  
A. G. Milnes
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Photoluminescence Properties

scholarly journals Growth and Photoluminescence Properties of InSb/GaSb Nano-Stripes Grown by Molecular Beam Epitaxy

2018 ◽  
Author(s):  
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Supachok Thainoi ◽  
Suwit Kiravittaya ◽  
Aniwat Tandaechanurat ◽  
Noppadon Nuntawong ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Photoluminescence Properties

Photoluminescence properties of ZnS epilayers grown by metalorganic molecular beam epitaxy

1996 ◽  
Vol 159 (1-4) ◽  
pp. 64-67 ◽  
Author(s):  
C.J. Summers ◽  
W. Tong ◽  
T.K. Tran ◽  
W. Ogle ◽  
W. Park ◽  
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Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Photoluminescence Properties ◽  
Metalorganic Molecular Beam Epitaxy

Photoluminescence properties of CuInSe2 grown by molecular beam epitaxy

1994 ◽  
Vol 35 ◽  
pp. 141-147 ◽  
Author(s):  
Shigeru Niki ◽  
Yunosuke Makita ◽  
Akimasa Yamada ◽  
Akira Obara ◽  
Osamu Igarashi ◽  
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Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Photoluminescence Properties

Unusual photoluminescence properties of vertically aligned InN nanorods grown by plasma-assisted molecular-beam epitaxy

2007 ◽  
Vol 4 (7) ◽  
pp. 2465-2468
Author(s):  
C.-H. Shen ◽  
H.-Y. Chen ◽  
H.-W. Lin ◽  
C.-Y. Wu ◽  
S. Gwo ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Photoluminescence Properties ◽  
Vertically Aligned
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