Observation of a negative differential resistance due to tunneling through a single barrier into a quantum well

1986 ◽  
Vol 49 (2) ◽  
pp. 70-72 ◽  
Author(s):  
H. Morkoç ◽  
J. Chen ◽  
U. K. Reddy ◽  
T. Henderson ◽  
S. Luryi
Keyword(s):  
Quantum Well ◽  
Negative Differential Resistance ◽  
Differential Resistance

S-shaped negative differential resistance in 650 nm quantum well laser diodes

2001 ◽  
Vol 45 (3) ◽  
pp. 447-452 ◽  
Author(s):  
M. Yin ◽  
P.M. Smowton ◽  
P. Blood ◽  
B. McAuley ◽  
C.C. Button
Keyword(s):  
Quantum Well ◽  
Negative Differential Resistance ◽  
Laser Diodes ◽  
Differential Resistance ◽  
Quantum Well Laser

Negative differential resistance induced by thermalization of two-dimensional electrons in terahertz quantum-well photodetectors

2013 ◽  
Vol 113 (20) ◽  
pp. 203109 ◽  
Author(s):  
X. G. Guo ◽  
L. L. Gu ◽  
M. Dong ◽  
J. C. Cao ◽  
H. C. Liu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Two Dimensional

THE THEORETICAL RESEARCH ON I-V CURVE IN MULTI-QUANTUM WELLS OF SEMICONDUCTORS

2006 ◽  
Vol 17 (04) ◽  
pp. 561-570
Author(s):  
BIN YANG ◽  
JIE ZHANG ◽  
YONG-FANG ZHAO ◽  
XIAO-GONG JING
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Theoretical Research ◽  
High Quality ◽  
Double Barrier ◽  
Multi Quantum Well ◽  
Double Barrier Structure ◽  
Good Agreement

The I-V curves in multi-quantum wells of different semiconductors are studied theoretically using the formalism of the transmission coefficient directly derived from Schrödinger equation. Al0.5Ga0.5As/GaAs double-barrier quantum well, Al0.29Ga0.71As/GaAs multi-quantum well, and AlSb/InAs double-barrier structure are calculated. The influences of well width, barrier width, temperature, Fermi energy on I-V characteristic curves are discussed in detail. Calculated results show that obvious negative differential resistance effects presented by our simulated I-V curves has a good agreement with previous experiments. Therefore, it can be a theoretical expectation to design experimentally high-quality semiconductor devices.

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