GaAs quantum well negative differential resistance device prepared by molecular-beam epitaxy

Wen-Chau Liu

doi:10.1116/1.585601

GaAs quantum well negative differential resistance device prepared by molecular-beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.585601 ◽

1991 ◽

Vol 9 (2) ◽

pp. 243 ◽

Cited By ~ 5

Author(s):

Wen-Chau Liu

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Negative Differential Resistance ◽

Molecular Beam ◽

Differential Resistance

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Repeatable low-temperature negative-differential resistance from Al0.18Ga0.82N/GaN resonant tunneling diodes grown by molecular-beam epitaxy on free-standing GaN substrates

Applied Physics Letters ◽

10.1063/1.4729819 ◽

2012 ◽

Vol 100 (25) ◽

pp. 252105 ◽

Cited By ~ 47

Author(s):

D. Li ◽

L. Tang ◽

C. Edmunds ◽

J. Shao ◽

G. Gardner ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Negative Differential Resistance ◽

Resonant Tunneling ◽

Molecular Beam ◽

Differential Resistance ◽

Resonant Tunneling Diodes ◽

Free Standing ◽

Tunneling Diodes

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Novel GaAs voltage‐controllable negative differential resistance transistor prepared by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.100747 ◽

1989 ◽

Vol 54 (12) ◽

pp. 1157-1159 ◽

Cited By ~ 9

Author(s):

K. F. Yarn ◽

Y. H. Wang ◽

C. Y. Chang

Keyword(s):

Molecular Beam Epitaxy ◽

Negative Differential Resistance ◽

Molecular Beam ◽

Differential Resistance

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Molecular Beam Epitaxy Grown GaAs Bipolar-Unipolar Transition Negative Differential Resistance Power Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.29.l2411 ◽

1990 ◽

Vol 29 (Part 2, No. 12) ◽

pp. L2411-L2413 ◽

Cited By ~ 1

Author(s):

Kao-Feng Yarn ◽

Chun-Yen Chang ◽

Yeong-Her Wang ◽

Ruey-Lue Wang

Keyword(s):

Molecular Beam Epitaxy ◽

Negative Differential Resistance ◽

Molecular Beam ◽

Differential Resistance ◽

Power Transistor

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Negative differential resistance at room temperature in δ ‐doped diodes grown by Si‐molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.111813 ◽

1994 ◽

Vol 64 (13) ◽

pp. 1711-1713 ◽

Cited By ~ 12

Author(s):

M. R. Sardela ◽

H. H. Radamson ◽

G. V. Hansson

Keyword(s):

Molecular Beam Epitaxy ◽

Negative Differential Resistance ◽

Room Temperature ◽

Molecular Beam ◽

Differential Resistance

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Room temperature negative differential resistance in AlN/GaN double barrier resonant tunneling diodes grown by RF-plasma assisted molecular beam epitaxy

60th DRC. Conference Digest Device Research Conference ◽

10.1109/drc.2002.1029572 ◽

2003 ◽

Author(s):

A. Kikuchi ◽

R. Bannai ◽

K. Kishino

Keyword(s):

Molecular Beam Epitaxy ◽

Negative Differential Resistance ◽

Resonant Tunneling ◽

Room Temperature ◽

Molecular Beam ◽

Differential Resistance ◽

Rf Plasma ◽

Double Barrier ◽

Tunneling Diodes ◽

Double Barrier Resonant Tunneling

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Room-temperature operation of a novel negative differential resistance device prepared by molecular-beam epitaxy

Philosophical Magazine Letters ◽

10.1080/09500839008206502 ◽

1990 ◽

Vol 61 (6) ◽

pp. 339-342

Author(s):

K. F. Yarn ◽

Y. H. Wang ◽

C. Y. Chang

Keyword(s):

Molecular Beam Epitaxy ◽

Negative Differential Resistance ◽

Room Temperature ◽

Molecular Beam ◽

Differential Resistance ◽

Room Temperature Operation

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A novel GaAs current-controlled bipolar-unipolar transition negative differential resistance transistor prepared by molecular-beam epitaxy

Philosophical Magazine Letters ◽

10.1080/09500839008206501 ◽

1990 ◽

Vol 61 (6) ◽

pp. 333-338

Author(s):

K. F. Yarn ◽

Y. H. Wang ◽

C. Y. Chang

Keyword(s):

Molecular Beam Epitaxy ◽

Negative Differential Resistance ◽

Molecular Beam ◽

Differential Resistance

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Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.4961442 ◽

2016 ◽

Vol 109 (8) ◽

pp. 083504 ◽

Cited By ~ 32

Author(s):

Tyler A. Growden ◽

David F. Storm ◽

Weidong Zhang ◽

Elliott R. Brown ◽

David J. Meyer ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Negative Differential Resistance ◽

Resonant Tunneling ◽

Room Temperature ◽

Molecular Beam ◽

Differential Resistance ◽

Resonant Tunneling Diodes ◽

Tunneling Diodes

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Molecular beam epitaxy of ZnCdSe/ZnSe strained quantum-well structures on GaAs(1 1 1)A substrates and piezoelectric properties

Journal of Crystal Growth ◽

10.1016/s0022-0248(97)00726-4 ◽

1998 ◽

Vol 184-185 (1-2) ◽

pp. 723-727

Author(s):

N Matsumura

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Piezoelectric Properties ◽

Quantum Well Structures ◽

Strained Quantum Well

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High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

Journal de Physique III ◽

10.1051/jp3:1992208 ◽

1992 ◽

Vol 2 (9) ◽

pp. 1727-1738 ◽

Cited By ~ 1

Author(s):

A. Accard ◽

F. Brillouet ◽

E. Duda ◽

B. Fernier ◽

G. Gelly ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

High Performance ◽

Molecular Beam ◽

Quantum Well Lasers ◽

Gas Source ◽

Semiconductor Quantum Well

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