scholarly journals Microcathodoluminescence and electron beam induced current observation of dislocations in freestanding thick n-GaN sample grown by hydride vapor phase epitaxy

2002 ◽  
Vol 92 (9) ◽  
pp. 5238-5240 ◽  
Author(s):  
A. Y. Polyakov ◽  
A. V. Govorkov ◽  
N. B. Smirnov ◽  
Z-Q. Fang ◽  
D. C. Look ◽  
...  
Keyword(s):  
Electron Beam ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Induced Current ◽  
Current Observation ◽  
Electron Beam Induced Current

Elimination of macrostep-induced current flow nonuniformity in vertical GaN PN diode using carbon-free drift layer grown by hydride vapor phase epitaxy

2018 ◽  
Vol 11 (4) ◽  
pp. 045502 ◽  
Author(s):  
Hajime Fujikura ◽  
Kentaro Hayashi ◽  
Fumimasa Horikiri ◽  
Yoshinobu Narita ◽  
Taichiro Konno ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Current Flow ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Induced Current ◽  
Drift Layer ◽  
Flow Nonuniformity

GaN PN-Structures Grown by Hydride Vapor Phase Epitaxy

1997 ◽  
Vol 482 ◽  
Author(s):  
A. E. Nikolaev ◽  
YU. V. Melnik ◽  
N. I. Kuznetsov ◽  
A. M. Strelchuk ◽  
A. P. Kovarsky ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Current Method ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Electrical Characteristics ◽  
Flow Geometry ◽  
Electron Beam Induced Current ◽  
P Type ◽  
First Time ◽  
Secondary Ion

AbstractFor the first time, GaN pn-junctions were fabricated by hydride vapor phase epitaxy. GaN pn-structures were grown directly on 6H-SiC substrates without any buffer layer. Undoped GaN layers were n-type with Nd-Na concentration ranged from 1×1017 to 5×1018 cm−3. Magnesium was used as an acceptor to grow p-type GaN layers. Mg atomic concentration determined by secondary ion mass spectroscopy ranged from 5×1019 to 5×1020 cm−3. As-grown GaN layers doped with Mg were p-type, and p-type conductivity was improved by post-growth anneal. Mesa diodes with a vertical current flow geometry were formed by reactive ion etching. The position of the GaN pn-junction was determined by the electron beam induced current method. The electrical characteristics of the pn diodes were studied. Electroluminescence from the pn diodes was measured.

Electron-Beam-Induced Current Observation of Misfit Dislocations at Si1-XGeX/Si Interfaces

1987 ◽  
Vol 26 (Part 2, No. 12) ◽  
pp. L1944-L1946 ◽  
Author(s):  
Yoshitaka Kohama ◽  
Yoshio Watanabe ◽  
Yukio Fukuda
Keyword(s):  
Electron Beam ◽  
Misfit Dislocations ◽  
Induced Current ◽  
Current Observation ◽  
Electron Beam Induced Current

Electron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing

2012 ◽  
Vol 725 ◽  
pp. 23-26
Author(s):  
Yong Zhao Yao ◽  
Koji Sato ◽  
Yoshihiro Sugawara ◽  
Yukari Ishikawa ◽  
Yoshihiro Okamoto ◽  
...  
Keyword(s):  
Electron Beam ◽  
Slip Plane ◽  
Mechanical Polishing ◽  
Induced Current ◽  
Abrasive Particles ◽  
Density Of Dislocations ◽  
Current Observation ◽  
Moving Direction ◽  
Electron Beam Induced Current ◽  
Step Down

Electron beam induced current (EBIC) observations have been carried out to investigate the influence of mechanical polishing (MP) direction on the dislocations formation at the Si-face c(0001) of 4H-SiC epitaxial layers. Two opposite MP directions (defined by polish pad moving direction) have been compared, which are [11-20] off-cut directions along step-up and step-down, respectively. It has been found that high density of dislocations have been formed along the polish paths for the 8o off samples with polishing pad moved in step-up direction. By contrast, step-down polishing samples have shown no significant dislocation increase although shallow polish scratches were observed. Similar experiments have also been carried out for 4o off samples, showing step-up MPs introduced more dislocations than step-down ones. The results are discussed in terms of forces along the slip plane [11-20](0001) effectively exerted by the abrasive particles on the steps.

Electron beam induced current study of thin silicon layers on insulator substrate

1990 ◽  
Vol 48 (4) ◽  
pp. 618-619
Author(s):  
A. Buczkowski ◽  
Z. J. Radzimski ◽  
J. C. Russ ◽  
G. A. Rozgonyi
Keyword(s):  
Electron Beam ◽  
Energy Loss ◽  
Beam Energy ◽  
Collection Efficiency ◽  
Silicon Layer ◽  
Depletion Layer ◽  
Incident Electron Energy ◽  
Induced Current ◽  
Electron Hole ◽  
Electron Beam Induced Current

If a thickness of a semiconductor is smaller than the penetration depth of the electron beam, e.g. in silicon on insulator (SOI) structures, only a small portion of incident electrons energy , which is lost in a superficial silicon layer separated by the oxide from the substrate, contributes to the electron beam induced current (EBIC). Because the energy loss distribution of primary beam is not uniform and varies with beam energy, it is not straightforward to predict the optimum conditions for using this technique. Moreover, the energy losses in an ohmic or Schottky contact complicate this prediction. None of the existing theories, which are based on an assumption of a point-like region of electron beam generation, can be used satisfactorily on SOI structures. We have used a Monte Carlo technique which provide a simulation of the electron beam interactions with thin multilayer structures. The EBIC current was calculated using a simple one dimensional geometry, i.e. depletion layer separating electron- hole pairs spreads out to infinity in x- and y-direction. A point-type generation function with location being an actual location of an incident electron energy loss event has been assumed. A collection efficiency of electron-hole pairs was assumed to be 100% for carriers generated within the depletion layer, and inversely proportional to the exponential function of depth with the effective diffusion length as a parameter outside this layer. A series of simulations were performed for various thicknesses of superficial silicon layer. The geometries used for simulations were chosen to match the "real" samples used in the experimental part of this work. The theoretical data presented in Fig. 1 show how significandy the gain decreases with a decrease in superficial layer thickness in comparison with bulk material. Moreover, there is an optimum beam energy at which the gain reaches its maximum value for particular silicon thickness.

Growth of GaN Nanorods by a Hydride Vapor Phase Epitaxy Method

2002 ◽  
Vol 14 (13-14) ◽  
pp. 991-993 ◽  
Author(s):  
H.-M. Kim ◽  
D.S. Kim ◽  
Y.S. Park ◽  
D.Y. Kim ◽  
T.W. Kang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Control of Surface Morphology during the Growth of (110)-Oriented GaAs by Hydride Vapor Phase Epitaxy

2021 ◽  
Author(s):  
Wondwosen Metaferia ◽  
Anna K. Braun ◽  
John Simon ◽  
Corinne E. Packard ◽  
Aaron J. Ptak ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy
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