Structure of interfaces in amorphous silicon/silicon nitride superlattices determined byinsituoptical reflectance

1986 ◽  
Vol 49 (11) ◽  
pp. 631-633 ◽  
Author(s):  
L. Yang ◽  
B. Abeles ◽  
P. D. Persans
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Nitride Superlattices ◽  
Silicon Silicon

Defect States in Silicon Nitride

1985 ◽  
Vol 49 ◽  
Author(s):  
John Robertson ◽  
Martin J. Powell
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Energy Levels ◽  
Dangling Bond ◽  
Defect States ◽  
Amorphous Silicon Nitride ◽  
Defect Centers ◽  
Electron Accumulation ◽  
Nitride Superlattices ◽  
Silicon Silicon

AbstractThe energy levels of defect centers in amorphous silicon nitride have been calculated. The results are related to recent photoemission and light-induced electron spin resonancedata. The Si dangling bond is argued to be the memory trap in MNOS devices and to be responsible for the electron accumulation at interfaces with amorphous silicon and for the n-type chargetransfer doping of amorphous silicon-silicon nitride superlattices.

Charge trapping effects in amorphous silicon/silicon nitride thin film transistors

1987 ◽  
Vol 97-98 ◽  
pp. 903-906 ◽  
Author(s):  
A.R. Hepburn ◽  
C. Main ◽  
J.M. Marshall ◽  
C. van Berkel ◽  
M.J. Powell
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Charge Trapping ◽  
Silicon Silicon ◽  
Trapping Effects

Evaluation of Deep States in Amorphous-Silicon/Silicon-Nitride System from Charge-Coupled Device Characteristics

1988 ◽  
Vol 27 (Part 2, No. 7) ◽  
pp. L1337-L1339 ◽  
Author(s):  
Satoshi Sekine ◽  
Satoshi Nakamura ◽  
Shunri Oda ◽  
Masakiyo Matsumura
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Charge Coupled Device ◽  
Silicon Silicon

Amorphous-silicon silicon-nitride field-effect transistors

1982 ◽  
Vol 18 (14) ◽  
pp. 599 ◽  
Author(s):  
K. Katoh ◽  
M. Yasui ◽  
H. Watanabe
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Silicon

Insituinvestigation of amorphous silicon/silicon nitride interfaces by infrared ellipsometry

1993 ◽  
Vol 62 (22) ◽  
pp. 2833-2835 ◽  
Author(s):  
H. Shirai ◽  
B. Drévillon ◽  
R. Ossikovski
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Infrared Ellipsometry ◽  
Silicon Silicon

Amorphous silicon‐silicon nitride thin‐film transistors

1981 ◽  
Vol 38 (10) ◽  
pp. 794-796 ◽  
Author(s):  
M. J. Powell ◽  
B. C. Easton ◽  
O. F. Hill
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Silicon Silicon
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