Insituinvestigation of amorphous silicon/silicon nitride interfaces by infrared ellipsometry

1993 ◽  
Vol 62 (22) ◽  
pp. 2833-2835 ◽  
Author(s):  
H. Shirai ◽  
B. Drévillon ◽  
R. Ossikovski
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Infrared Ellipsometry ◽  
Silicon Silicon

In Situ Investigation of Amorphous Silicon / Silicon Nitride Interfaces by Infrared Ellipsometry

1992 ◽  
Vol 284 ◽  
Author(s):  
H. Shirai ◽  
B. Drévillon ◽  
R. Ossikovski
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Sharp Interface ◽  
Nitrogen Incorporation ◽  
Infrared Ellipsometry ◽  
In Situ Investigation ◽  
Silicon Silicon

ABSTRACTA detailed in situ study, by Infrared Phase Modulated Ellipsometry (IRPME), of interfaces between amorphous silicon (a-Si:H) and silicon nitride (a-SiNx) is presented. A behaviour compatible with a sharp interface is observed when a-SiNx is deposited on top of a-Si:H, the underlayer material being very weakly influenced by the deposition of the overlayer. In contrast a graded transition is observed when a-SiNx is deposited first. In the latter case, the IR measurements directly reveal a nitrogen incorporation in the first monolayers of a-Si:H together with an increase of intensity of the SiH bonds at the interface.

Charge trapping effects in amorphous silicon/silicon nitride thin film transistors

1987 ◽  
Vol 97-98 ◽  
pp. 903-906 ◽  
Author(s):  
A.R. Hepburn ◽  
C. Main ◽  
J.M. Marshall ◽  
C. van Berkel ◽  
M.J. Powell
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Charge Trapping ◽  
Silicon Silicon ◽  
Trapping Effects

Evaluation of Deep States in Amorphous-Silicon/Silicon-Nitride System from Charge-Coupled Device Characteristics

1988 ◽  
Vol 27 (Part 2, No. 7) ◽  
pp. L1337-L1339 ◽  
Author(s):  
Satoshi Sekine ◽  
Satoshi Nakamura ◽  
Shunri Oda ◽  
Masakiyo Matsumura
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Charge Coupled Device ◽  
Silicon Silicon

Amorphous-silicon silicon-nitride field-effect transistors

1982 ◽  
Vol 18 (14) ◽  
pp. 599 ◽  
Author(s):  
K. Katoh ◽  
M. Yasui ◽  
H. Watanabe
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Silicon

Amorphous silicon‐silicon nitride thin‐film transistors

1981 ◽  
Vol 38 (10) ◽  
pp. 794-796 ◽  
Author(s):  
M. J. Powell ◽  
B. C. Easton ◽  
O. F. Hill
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Silicon Silicon
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