Study of silicon‐hydrogen bonds at an amorphous silicon/silicon nitride interface using infrared attenuated total reflection spectroscopy

1992 ◽  
Vol 60 (16) ◽  
pp. 1942-1944 ◽  
Author(s):  
Tomotaka Matsumoto ◽  
Yuji Murata ◽  
Jun‐ichi Watanabe
Keyword(s):  
Silicon Nitride ◽  
Hydrogen Bonds ◽  
Amorphous Silicon ◽  
Total Reflection ◽  
Attenuated Total Reflection ◽  
Reflection Spectroscopy ◽  
Silicon Silicon

scholarly journals Toward Chalcogenide Platform Infrared Sensor Dedicated to the In Situ Detection of Aromatic Hydrocarbons in Natural Waters via an Attenuated Total Reflection Spectroscopy Study

Sensors ◽  
2021 ◽  
Vol 21 (7) ◽  
pp. 2449
Author(s):  
Marion Baillieul ◽  
Emeline Baudet ◽  
Karine Michel ◽  
Jonathan Moreau ◽  
Petr Němec ◽  
...  
Keyword(s):  
Natural Water ◽  
Natural Waters ◽  
Total Reflection ◽  
Attenuated Total Reflection ◽  
Infrared Sensor ◽  
Reflection Spectroscopy ◽  
Infrared Spectral ◽  
Micro Sensor ◽  
In Situ Detection

The objective of this study is to demonstrate the successful functionalization of the surface of a chalcogenide infrared waveguide with the ultimate goal of developing an infrared micro-sensor device. First, a polyisobutylene coating was selected by testing its physico-chemical compatibility with a Ge-Sb-Se selenide surface. To simulate the chalcogenide platform infrared sensor, the detection of benzene, toluene, and ortho-, meta- and para-xylenes was efficaciously performed using a polyisobutylene layer spin-coated on 1 and 2.5 µm co-sputtered selenide films of Ge28Sb12Se60 composition deposited on a zinc selenide prism used for attenuated total reflection spectroscopy. The thickness of the polymer coating was optimized by attenuated total reflection spectroscopy to achieve the highest possible attenuation of water absorption while maintaining the diffusion rate of the pollutant through the polymer film compatible with the targeted in situ analysis. Then, natural water, i.e., groundwater, wastewater, and seawater, was sampled for detection measurement by means of attenuated total reflection spectroscopy. This study is a valuable contribution concerning the functionalization by a hydrophobic polymer compatible with a chalcogenide optical sensor designed to operate in the mid-infrared spectral range to detect in situ organic molecules in natural water.

Terahertz cavity-enhanced attenuated total reflection spectroscopy

2005 ◽  
Vol 86 (20) ◽  
pp. 201116 ◽  
Author(s):  
Robert Schiwon ◽  
Gerhard Schwaab ◽  
Erik Bründermann ◽  
Martina Havenith
Keyword(s):  
Total Reflection ◽  
Attenuated Total Reflection ◽  
Reflection Spectroscopy

scholarly journals 3P139 Terahertz Attenuated Total Reflection Spectroscopy of liquid water and solutions

2005 ◽  
Vol 45 (supplement) ◽  
pp. S238
Author(s):  
A. Kenmochi ◽  
T. Tanabe ◽  
Y. Oyma ◽  
K. Suto ◽  
J. Nishizawa ◽  
...  
Keyword(s):  
Liquid Water ◽  
Total Reflection ◽  
Attenuated Total Reflection ◽  
Reflection Spectroscopy

Nucleation Mechanism of Microcrystalline Silicon Studied by Real Time Spectroscopic Ellipsometry and Infrared Spectroscopy

2000 ◽  
Vol 609 ◽  
Author(s):  
Hiroyuki Fujiwara ◽  
Yasutake Toyoshima ◽  
Michio Kondo ◽  
Akihisa Matsuda
Keyword(s):  
Plasma Treatment ◽  
Real Time ◽  
Spectroscopic Ellipsometry ◽  
Nucleation Mechanism ◽  
Total Reflection ◽  
Attenuated Total Reflection ◽  
Reflection Spectroscopy ◽  
Microcrystalline Silicon ◽  
Strained Si ◽  
Initial Layers

ABSTRACTWe have characterized a-Si:H initial layers for μc-Si:H nucleation by real time spectroscopic ellipsometry (SE) and infrared attenuated total reflection spectroscopy (ATR) to investigate the μc-Si:H formation mechanism. By performing Ar plasma treatment of a-Si:H layers, we confirmed a presence of a 2 monolayer thick sub-surface in a-Si:H layers. In the a-Si:H sub-surface that leads to the μc-Si:H nucleation, an important peak at ∼1937 cm−1 assigned to the SiHn complex was found in the ATR spectra. From H2 plasma treatment experiments, we proposed that this SiHn complex is formed by H insertion into strained Si-Si bonds. The SiHn complex formed in the a-Si:H sub-surface showed a clear relationship with the μc-Si:H nucleation. From these results, we conclude that the μc-Si:H nucleation occurs by the formation of the chemically active and flexible SiHn complexes in the 2 monolayer thick a-Si:H sub-surface.

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