Tunneling current spectroscopy of electron subbands inn‐type δ‐doped silicon structures grown by molecular beam epitaxy

1990 ◽  
Vol 67 (4) ◽  
pp. 1962-1968 ◽  
Author(s):  
Hui‐Min Li ◽  
Karl‐Fredrik Berggren ◽  
Wei‐Xin Ni ◽  
Bo E. Sernelius ◽  
Magnus Willander ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Tunneling Current ◽  
Doped Silicon ◽  
Silicon Structures

The electrical properties of doped silicon, grown by Molecular-Beam-Epitaxy (MBE)

1987 ◽  
Vol 42 (3) ◽  
pp. 197-200 ◽  
Author(s):  
R. A. A. Kubiak ◽  
S. M. Newstead ◽  
W. Y. Leong ◽  
R. Houghton ◽  
E. H. C. Parker ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Doped Silicon

Peculiarities of photoluminescence of erbium in silicon structures prepared by the sublimation molecular-beam epitaxy method

2001 ◽  
Vol 43 (6) ◽  
pp. 1012-1017 ◽  
Author(s):  
B. A. Andreev ◽  
Z. F. Krasil’nik ◽  
V. P. Kuznetsov ◽  
A. O. Soldatkin ◽  
M. S. Bresler ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Method ◽  
Silicon Structures

Arsenic surface segregation during in situ doped silicon and Si1−xGex molecular beam epitaxy

2005 ◽  
Vol 281 (2-4) ◽  
pp. 334-343 ◽  
Author(s):  
Xian Liu ◽  
Qiang Tang ◽  
James S. Harris ◽  
Theodore I. Kamins
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Doped Silicon

Growth Conditions of Erbium-Oxygen-Doped Silicon Grown by MBE

1996 ◽  
Vol 422 ◽  
Author(s):  
J. Stimmer ◽  
A. Reittinger ◽  
G. Abstreiter ◽  
H. Holzbrecher ◽  
Ch. Buchal
Keyword(s):  
Molecular Beam Epitaxy ◽  
Systematic Study ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Light Emitting Diode ◽  
Growth Conditions ◽  
Light Emitting ◽  
Doped Silicon

AbstractWe report on a systematic study of the growth parameters of erbium-oxygen-doped silicon grown by molecular beam epitaxy. The surface quality of the grown layers was measured in situ by RHEED. The samples were characterized by photoluminescence measurements and SIMS. An Er-O-doped Si light emitting diode grown with the optimized parameters is presented.

Growth of a delta‐doped silicon layer by molecular beam epitaxy on a charge‐coupled device for reflection‐limited ultraviolet quantum efficiency

1992 ◽  
Vol 61 (9) ◽  
pp. 1084-1086 ◽  
Author(s):  
Michael E. Hoenk ◽  
Paula J. Grunthaner ◽  
Frank J. Grunthaner ◽  
R. W. Terhune ◽  
Masoud Fattahi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Efficiency ◽  
Molecular Beam ◽  
Silicon Layer ◽  
Charge Coupled Device ◽  
Doped Silicon ◽  
A Charge
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