Monolithic integration of a laser diode and an optical waveguide modulator having a GaAs/AlGaAs quantum well double heterostructure

1986 ◽  
Vol 48 (1) ◽  
pp. 1-3 ◽  
Author(s):  
Seigo Tarucha ◽  
Hiroshi Okamoto
Keyword(s):  
Quantum Well ◽  
Optical Waveguide ◽  
Laser Diode ◽  
Monolithic Integration ◽  
Double Heterostructure ◽  
Waveguide Modulator

Integrated laser-diode voltage driver for 20-Gb/s optical systems using 0.3- mu m gate length quantum-well HEMT's

1993 ◽  
Vol 28 (7) ◽  
pp. 829-834 ◽  
Author(s):  
Z.-G. Wang ◽  
M. Berroth ◽  
U. Nowotny ◽  
M. Ludwig ◽  
P. Hofmann ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Optical Systems ◽  
Gate Length ◽  
Diode Voltage

Monolithic Integration of Si and GaAs Devices

1986 ◽  
Vol 67 ◽  
Author(s):  
H. K. Choi ◽  
G. W. Turner ◽  
B-Y. Tsaur ◽  
T. H. Windhorn
Keyword(s):  
Monolithic Integration ◽  
Double Heterostructure ◽  
Si Substrates ◽  
Gaas Substrates ◽  
Gaas Devices ◽  
Voltage Pulses ◽  
First Time

ABSTRACTIntegration of Si MOSFETs with GaAs MESFETs and with GaAs/AlGaAs double-heterostructure LEDs on monolithic GaAs/Si substrates is reported. Both Si MOSFETs and GaAs MESFETs show characteristics comparable to those for devices fabricated on separate Si and GaAs substrates. In LED/MOSFET integration, the cathode of each LED is connected with the drain of a MOSFET. This is the first time that Si and GaAs devices have been monolithically interconnected. LED modulation rates up to 27 Mbps have been achieved by applying a stream of voltage pulses to the MOSFET gate.

High Performance InGaAs/AlGaAs Quantum Well Semiconductor Laser Diode with Non-absorption Window

2022 ◽  
Vol 43 (01) ◽  
pp. 110-118
Author(s):  
Cui-cui LIU ◽  
◽  
Nan LIN ◽  
Xiao-yu MA ◽  
Hong-qi JING ◽  
...  
Keyword(s):  
Quantum Well ◽  
Semiconductor Laser ◽  
Laser Diode ◽  
High Performance ◽  
Semiconductor Laser Diode ◽  
Absorption Window
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