Integrated laser-diode voltage driver for 20-Gb/s optical systems using 0.3- mu m gate length quantum-well HEMT's

1993 ◽  
Vol 28 (7) ◽  
pp. 829-834 ◽  
Author(s):  
Z.-G. Wang ◽  
M. Berroth ◽  
U. Nowotny ◽  
M. Ludwig ◽  
P. Hofmann ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Optical Systems ◽  
Gate Length ◽  
Diode Voltage

High Performance InGaAs/AlGaAs Quantum Well Semiconductor Laser Diode with Non-absorption Window

2022 ◽  
Vol 43 (01) ◽  
pp. 110-118
Author(s):  
Cui-cui LIU ◽  
◽  
Nan LIN ◽  
Xiao-yu MA ◽  
Hong-qi JING ◽  
...  
Keyword(s):  
Quantum Well ◽  
Semiconductor Laser ◽  
Laser Diode ◽  
High Performance ◽  
Semiconductor Laser Diode ◽  
Absorption Window

2μm InGaAsSb/AlGaAsSb Multi-quantum Well Laser Diode with Electron Stopper Layer

2014 ◽  
Vol 35 (10) ◽  
pp. 1205-1209
Author(s):  
安宁 AN Ning ◽  
刘国军 LIU Guo-jun ◽  
李占国 LI Zhan-guo ◽  
常量 CHANG Liang ◽  
魏志鹏 WEI Zhi-peng ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Quantum Well Laser ◽  
Multi Quantum Well

Simulation Study of Performance for a 20-nm Gate Length In$_{\bf 0.53}$Ga$_{\bf 0.47}$As Implant Free Quantum Well MOSFET

2012 ◽  
Vol 11 (4) ◽  
pp. 808-817 ◽  
Author(s):  
Brahim Benbakhti ◽  
Antonio Martinez ◽  
Karol Kalna ◽  
Geert Hellings ◽  
Geert Eneman ◽  
...  
Keyword(s):  
Quantum Well ◽  
Simulation Study ◽  
Gate Length ◽  
20 Nm

Continuous-Wave Operation of GaN Based Multi-Quantum-Well Laser Diode at Room Temperature

2008 ◽  
Vol 25 (4) ◽  
pp. 1281-1283 ◽  
Author(s):  
Zhang Li-Qun ◽  
Zhang Shu-Ming ◽  
Yang Hui ◽  
Cao Qing ◽  
Ji Lian ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Room Temperature ◽  
Continuous Wave ◽  
Quantum Well Laser ◽  
Continuous Wave Operation ◽  
Multi Quantum Well

Localized excitons in an In0.06Ga0.94N multiple-quantum-well laser diode lased at 400 nm

2001 ◽  
Vol 79 (3) ◽  
pp. 341-343 ◽  
Author(s):  
Shigefusa F. Chichibu ◽  
Takashi Azuhata ◽  
Takayuki Sota ◽  
Takashi Mukai
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Localized Excitons ◽  
Multiple Quantum Well Laser

MONOLITHIC INTEGRATION OF DFB LASERS AND ELECTROABSORPTION MODULATORS USING IN-PLANE QUANTUM ENERGY CONTROL OF MQW STRUCTURES

1994 ◽  
Vol 05 (01) ◽  
pp. 67-90 ◽  
Author(s):  
MASAHIRO AOKI ◽  
MAKOTO SUZUKI ◽  
HIROHISA SANO ◽  
SHINYA SASAKI ◽  
TOSHIHIRO KAWANO ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Crystal Quality ◽  
Optical Modulator ◽  
Optical Fiber Communications ◽  
Integration Scheme ◽  
Energy Control ◽  
Quantum Energy ◽  
Dfb Laser ◽  
Waveguide Coupling

This paper describes the fabrication and characteristics of a new multiple-quantum-well (MQW) integrated distributed feedback (DFB) laser diode-electroabsorption (EA) optical modulator for use as the transmitter light source in multigigabit, long-distance optical fiber communications. The device employed a novel integration scheme for active/passive waveguide coupling achieved by controlling the quantum energy of selectively grown MQW structures. This new fabrication technique for photonic integrated circuits (PICs) facilitates smooth, high-quality waveguide coupling between the interconnected guided-wave elements. It is based on the growth rate enhancement or compositional changes in the material of the quantum-well layer grown by selective-area metalorganic vapor phase epitaxy (MOVPE). Good local quantum energy control within a very wide range is shown for simultaneously grown MQW crystals. Moreover, the crystal quality, well/barrier heterointerface, and flatness and uniformity of these selectively grown MQW crystals are found to be as good as those of normally grown crystals. This technique is applied to an MQW integrated DFB laser diode-EA modulator. Superior device performance, including a low threshold and highly efficient lasing properties, as well as high-speed, low-drive-voltage, and low-chirp modulator characteristics are attained due to improved optical coupling, easy fabrication, and sufficient crystal quality of selectively grown MQW structures. 10 Gbit/s data transmission is demonstrated over a 500 km dispersion-shifted single-mode fiber. This combined with long-term device reliability, makes this integration technique more attractive for practical fabrication of semiconductor PICs.

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