Junction field‐effect transistor single quantum well optical waveguide modulator employing the two‐dimensional Moss–Burstein effect

1989 ◽  
Vol 54 (22) ◽  
pp. 2177-2179 ◽  
Author(s):  
J. H. Abeles ◽  
W. K. Chan ◽  
E. Colas ◽  
A. Kastalsky
ACS Nano ◽  
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Vol 114 ◽  
pp. 62-74 ◽  
Author(s):  
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Remya Jayachandran ◽  
K.J. Suja ◽  
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Ultrathin porous films held together by non-covalent van der Waals interactions was obtained by a top-down approach, which is then utilized as channel material in a two-dimensional planar field-effect transistor device through easy stamp transfer.


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